參數資料
型號: FX30SMJ-3
廠商: Mitsubishi Electric Corporation
英文描述: HIGH-SPEED SWITCHING USE
中文描述: 高速開關使用
文件頁數: 3/4頁
文件大?。?/td> 70K
代理商: FX30SMJ-3
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX30SMJ-3
HIGH-SPEED SWITCHING USE
0
–10
–20
–30
–40
–50
0
–2
–4
–6
–8
–10
T
C
= 25°C
V
DS
= –10V
Pulse Test
–10
0
–10
1
–2 –3
–5 –7
–2 –3
–5 –7
–10
2
10
3
2
3
5
7
2
3
5
7
10
2
10
4
2
3
5
7
10
5
Ciss
Coss
Crss
T
C
h = 25°C
f = 1MH
Z
V
GS
= 0V
0
–10
0
40
80
120
160
200
–10
1
–2 –3
–5 –7
–10
2
–2 –3
–5 –7
V
GS
= –4V
–10V
T
C
= 25°C
Pulse Test
–10
0
–10
1
–2 –3
–5 –7
–2 –3
–5 –7
–7
10
0
10
1
2
3
5
7
10
2
2
3
5
7
T
C
= 25°C
75°C
125°C
V
DS
= –10V
Pulse Test
–10
0
–7
–2
–10
1
–3 –5–7
–2
–10
2
–3 –5–7
–2 –3 –5–7
10
2
2
3
5
7
10
3
2
3
5
7
2
t
d(off)
t
d(on)
t
f
t
r
T
C
h = 25°C
V
DD
= –80V
V
GS
= –10V
R
GEN
= R
GS
= 50
0
–2
–4
–6
–8
–10
0
–2
–4
–6
–8
–10
–30A
–15A
I
D
= –45A
T
C
= 25°C
Pulse Test
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
V
D
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
D
R
D
)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
D
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
F
A
y
f
(
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
C
C
S
相關PDF資料
PDF描述
FX30SMJ-3 Pch POWER MOSFET HIGH-SPEED SWITCHING USE
FX346 AMPS TACS NMT AUDIO PROCESSING ARRAY
FX346LG AMPS TACS NMT AUDIO PROCESSING ARRAY
FX346J AMPS TACS NMT AUDIO PROCESSING ARRAY
FX346LS AMPS TACS NMT AUDIO PROCESSING ARRAY
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