參數(shù)資料
型號: FX30KMJ-06
廠商: POWEREX INC
元件分類: JFETs
英文描述: Pch POWER MOSFET HIGH-SPEED SWITCHING USE
中文描述: 30 A, 60 V, 0.054 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: COMPACT, TO-220FN, 3 PIN
文件頁數(shù): 3/4頁
文件大?。?/td> 50K
代理商: FX30KMJ-06
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Jan.1999
–10
0
–10
1
–2 –3 –4–5 –7
–10
2
–2 –3 –4–5 –7
10
10
1
2
3
4
5
7
10
2
2
3
4
5
7
25°C
T
C
=
75°C
125°C
V
DS
= –10V
Pulse Test
0
–10
–1
–2
20
40
60
80
100
–10
0
–3 –5–7
–2
–10
1
–3 –5–7
–2
–10
2
–3 –5–7
V
GS
= –4V
Tc = 25°C
Pulse Test
–10V
0
–10
–20
–30
–40
–50
0
–2
–4
–6
–8
–10
Tc = 25°C
V
DS
= –10V
Pulse Test
0
–1.0
–2.0
–3.0
–4.0
–5.0
0
–2
–4
–6
–8
–10
–50A
I
D
=
–15A
–30A
Tc = 25°C
Pulse Test
10
2
2
3
5
7
10
3
2
3
5
7
10
4
2
3
5
7
–10
0
–3 –5–7
–2
–10
1
–3 –5–7
2
–2
–2 –3
–10
2
–3 –5–7
Ciss
Coss
Crss
Tch = 25°C
f = 1MH
Z
V
GS
= 0V
–10
0
–7
–10
1
–2 –3
–5 –7
–2 –3
–5
–7
10
1
5
7
10
2
2
2
3
5
7
3
5
Tch = 25°C
V
GS
= –10V
V
DD
= –30V
R
GEN
= R
GS
= 50
t
d(off)
t
d(on)
t
r
t
f
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
V
D
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
D
R
D
)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
D
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
F
A
y
f
(
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
C
C
S
MITSUBISHI Pch POWER MOSFET
FX30KMJ-06
HIGH-SPEED SWITCHING USE
相關(guān)PDF資料
PDF描述
FX30KMJ-2 HIGH-SPEED SWITCHING USE
FX30KMJ-2 Pch POWER MOSFET HIGH-SPEED SWITCHING USE
FX30KMJ-3 HIGH-SPEED SWITCHING USE
FX30KMJ-3 Pch POWER MOSFET HIGH-SPEED SWITCHING USE
FX30SMJ-3 HIGH-SPEED SWITCHING USE
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