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參數(shù)資料
| 型號(hào)： | FX30ASJ-03 |
| 廠商： | POWEREX INC |
| 元件分類： | JFETs |
| 英文描述： | Pch POWER MOSFET HIGH-SPEED SWITCHING USE |
| 中文描述： | 30 A, 30 V, 0.061 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | COMPACT, MP-3, 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 44K |
| 代理商： | FX30ASJ-03 |
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Jan.1999
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
V
μ
A
mA
V
m
m
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
–30
—
—
–1.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–1.8
48
96
–0.72
11.9
2460
410
170
20
84
123
60
–1.0
—
50
—
±0.1
–0.1
–2.3
61
120
–0.92
—
—
—
—
—
—
—
—
–1.5
3.57
—
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
I
D
= –1mA, V
DS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= –30V, V
GS
= 0V
I
D
= –1mA, V
DS
= –10V
I
D
= –15A, V
GS
= –10V
I
D
= –5A, V
GS
= –4V
I
D
= –15A, V
GS
= –10V
I
D
= –15A, V
DS
= –10V
V
DS
= –10V, V
GS
= 0V, f = 1MHz
V
DD
= –15V, I
D
= –15A, V
GS
= –10V, R
GEN
= R
GS
= 50
I
S
= –15A, V
GS
= 0V
Channel to case
I
S
= –15A, dis/dt = 50A/
μ
s
PERFORMANCE CURVES
0
10
20
30
40
50
0
200
50
100
150
–2
–3
–10
0
–5
–7
–10
1
–2
–3
–5
–7
–10
2
–2
–3
–5
–7
–10
0
–2
–10
1
–3 –5–7
–2
–10
2
–3 –5–7
–2
–2 –3 –5–7
–2
tw = 10
μ
s
T
C
= 25°C
Single Pulse
100
μ
s
10ms
1ms
DC
0
–10
–20
–30
–40
–50
0
–1.0
–2.0
–3.0
–4.0
–5.0
Tc = 25°C
Pulse Test
–6V
–7V
–8V
P
D
= 35W
V
GS
=
–10V
–4V
–3V
–5V
0
–4
–8
–12
–16
–20
0
–0.4
–0.8
–1.2
–1.6
–2.0
Tc = 25°C
Pulse Test
–6V
–8V
P
D
= 35W
V
GS
= –10V
–4V
–3V
–5V
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
P
D
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
D
D
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
MITSUBISHI Pch POWER MOSFET
FX30ASJ-03
HIGH-SPEED SWITCHING USE
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| FX30KMJ-03 | HIGH-SPEED SWITCHING USE |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FX30ASJ-03-T13 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Pch Power MOS FET |
| FX30KM06 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | SOT-186 |
| FX30KM2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 30A I(D) | SOT-186 |
| FX30KM3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 30A I(D) | SOT-186 |
| FX30KMH03 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 30A I(D) | SOT-186 |
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