參數(shù)資料
型號: FX20VSJ-3
廠商: POWEREX INC
元件分類: JFETs
英文描述: Pch POWER MOSFET HIGH-SPEED SWITCHING USE
中文描述: 20 A, 150 V, P-CHANNEL, Si, POWER, MOSFET
封裝: COMPACT, TO-220S, 3 PIN
文件頁數(shù): 2/4頁
文件大小: 45K
代理商: FX20VSJ-3
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX20VSJ-3
HIGH-SPEED SWITCHING USE
PERFORMANCE CURVES
0
20
40
60
80
100
0
200
50
100
150
–2
–3
–10
0
–5
–7
–10
1
–2
–3
–5
–7
–10
2
–2
–3
–5
–7
–10
1
–2
–10
2
–3 –5–7
–2
–10
3
–3 –5–7
–2
–2 –3 –5–7
–2
tw = 10
μ
s
100
μ
s
1ms
10ms
DC
T
C
= 25°C
Single Pulse
0
–2
–4
–6
–8
–10
0
–1.0
–2.0
–3.0
–4.0
–5.0
–2.5V
V
GS
= –10V
T
C
= 25°C
Pulse Test
–4V
–3V
–6V
–8V
0
–4
–8
–12
–16
–20
0
–2
–4
–6
–8
–10
–3V
–2.5V
–4V
P
D
= 70W
T
C
= 25°C
Pulse Test
–6V
V
GS
=
–10V
–8V
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
P
D
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
D
D
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
V
μ
A
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
–150
–1.0
–1.5
0.23
0.25
–2.3
17.5
4470
248
115
15
42
273
114
–1.0
100
±0.1
–0.1
–2.0
0.29
0.32
–2.9
–1.5
1.79
I
D
= –1mA, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= –150V, V
GS
= 0V
I
D
= –1mA, V
DS
= –10V
I
D
= –10A, V
GS
= –10V
I
D
= –10A, V
GS
= –4V
I
D
= –10A, V
GS
= –10V
I
D
= –10A, V
DS
= –10V
V
DS
= –10V, V
GS
= 0V, f = 1MHz
V
DD
= –80V, I
D
= –
10
A, V
GS
= –10V, R
GEN
= R
GS
= 50
I
S
= –10A, V
GS
= 0V
Channel to case
I
S
= –20A, dis/dt = 100A/
μ
s
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
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