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參數資料
| 型號： | FX20KMJ-2 |
| 廠商： | POWEREX INC |
| 元件分類： | JFETs |
| 英文描述： | Pch POWER MOSFET HIGH-SPEED SWITCHING USE |
| 中文描述： | 20 A, 100 V, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | COMPACT, TO-220FN, 3 PIN |
| 文件頁數： | 3/4頁 |
| 文件大小： | 51K |
| 代理商： | FX20KMJ-2 |
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Jan.1999
0
–10
–20
–30
–40
–50
0
–2
–4
–6
–8
–10
I
D
=
–40A
–20A
–10A
Tc = 25°C
Pulse Test
0
–10
–20
–30
–40
–50
0
–2
–4
–6
–8
–10
Tc = 25°C
V
DS
= –10V
Pulse Test
–10
0
–5 –7
–2 –3 –4–5 –7
–10
1
–2 –3 –4–5
10
1
3
4
5
7
10
2
2
3
4
5
7
2
3
Tch = 25°C
V
GS
= –10V
V
DD
= –50V
R
GEN
= R
GS
= 50
t
d(off)
t
d(on)
t
r
t
f
–10
0
–3 –5–7
–2
–10
1
–3 –5–7
–2
–10
2
–3 –5–7
–2 –3
10
2
3
4
5
7
10
3
2
3
4
5
7
2
3
Ciss
Crss
Coss
Tch = 25°C
f = 1MH
Z
V
GS
= 0V
0
–10
–1
–2
0.1
0.2
0.3
0.4
0.5
–10
0
–3 –5–7
–2
–10
1
–3 –5–7
–2
–10
2
–3 –5–7
V
GS
=
–4V
Tc = 25°C
Pulse Test
–10V
–10
0
–7
–10
1
–2
–3 –4–5 –7
–2
–3 –4–5 –7
10
0
2
3
4
5
7
10
1
2
3
4
5
7
2
T
C
= 25°C 75°C 125°C
V
DS
= –10V
Pulse Test
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
V
D
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
D
R
D
)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
D
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
F
A
y
f
(
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
C
C
S
MITSUBISHI Pch POWER MOSFET
FX20KMJ-2
HIGH-SPEED SWITCHING USE
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| FX20KMJ-2-A8 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Pch Power MOS FET |
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