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參數(shù)資料
| 型號： | FW111 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Load S/W Applications |
| 中文描述： | 負(fù)載的S / W應(yīng)用 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 45K |
| 代理商： | FW111 |
No.5909-3/4
FW111
V
GS
=0
I
D
=-2A,V
GS
=-2.5V
I
D
=-5A,V
GS
=-4V
T7C
-
2
2
f=1MHz
Ciss
Crss
Coss
V
DS
=-10V
I
D
=-5A
C
S
O
D
o
)
–
Case Temperature, Tc – C
Ciss,Coss,Crss
-
V
DS
Diode Forward Voltage, V
SD
– V
V
GS
-
Qg
Drain-to-Source Voltage,V
DS
– V
SW Time
-
I
D
Total Gate Charge, Qg
–
nC
G
G
F
F
R
DS(on)
-
Tc
I
F
-
V
SD
2
3
5
7
-0.01
-0.1
2
3
5
7
-1.0
2
3
5
7
-10
20
40
100
120
140
80
60
0
-60
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-40
-20
0
20
40
60
80
100
120
140
100
2
3
5
7
10000
2
3
5
7
1000
-1
-2
-3
-4
-5
-10
-9
-8
-7
-6
0
0
-2
-4
-10
-8
-6
-12
-14
-16
-18
-20
0
5
10
15
20
30
25
Mounted on a ceramic board (1000mm
2
×
0.8mm)
20
40
60
I
D
=5A
1ms
10ms
100ms
I
DP
=32A
Operation in this area
is limited by R
DS
(on).
DCoperation
100
μ
s
V
DD
=-10V
V
GS
=-4V
tr
tf
td(off)
td(on)
Ta=25C
1pulse
1unit
Mounted on a ceramic board (1000mm
2
×
0.8mm)
2
2
3
5 7
-0.01
-0.1
Toa Dsipaion
1unt
Mounedonaceamcboad(1000mm
2
×
08mm
S
Drain Current,I
D
– A
P
D
(FET2)
-
P
D
(FET1)
A
D
Allowable Power Disipation, P
D
(FET1) – W
A
D
Ambient Temperature,Ta – C
Drain-to-Source Voltage, V
DS
– V
D
D
P
D
-
Ta
A S O
0
0.2
0.2
0.4
0.6
0.8
1.0
2.0
1.6
1.8
1.4
1.2
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
0.5
1.0
2.5
2.0
1.7
1.5
0
80
100
120
140
160
3
5
3
5
7
7
-0.1
-0.01
-1.0
-10
2 3
5 7
2
3
2
2
3
5
7
2
3
5
7
2
3
5
7
-1.0
-10
2
3
5
7
-0.1
10
100
2
3
5
7
1000
2
3
5
7-1.0
2
3
5
7
-10
2
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