參數(shù)資料
型號(hào)： FW103
廠商： Sanyo Electric Co.,Ltd.
英文描述： CAP,CER,1206,1000P,10%,500V,NI
中文描述： 超高速開關(guān)應(yīng)用
文件頁數(shù)： 1/3頁
文件大小： 45K
代理商： FW103
FW103
Ordering number : EN5305A
Ultrahigh-Speed Switching Applications
P-Channel Silicon MOSFET
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
O1397TS (KOTO) TA-0255 No.5305-1/3
Package Dimensions
unit: mm
2129-SOP8
[FW103]
SANYO : SOP8
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Symbol
VDSS
VGSS
ID
IDP
PD
Conditions
Ratings
Unit
V
V
A
A
W
–30
±20
–3
–32
1.7
PW
≤
10μs, duty cycle
≤
1%
Mounted on a ceramic board
(1000mm
2
×
0.8mm) 1unit
Mounted on a ceramic board
(1000mm
2
×
0.8mm)
Total Dissipation
PT
2.0
W
Channel Temperature
Storage temperature
Tch
Tstg
150
°C
°C
–55 to +150
Electrical Characteristics
at Ta=25°C
Parameter
Symbol
Conditions
Ratings
typ
min
–30
max
Unit
D-S Breakdown Voltage
Zero-Gate-Voltage Drain Current IDSS
Gate-to-Source Leakage Current IGSS
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source
ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS
ID=–1mA, VGS=0
VDS=–30V, VGS=0
VGS=±16V, VDS=0
VDS=–10V, ID=–1mA
VDS=–10V, ID=–3A
ID=–3A, VGS=–10V
ID=–3A, VGS=–4V
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
V
μA
μA
V
S
m
m
pF
pF
pF
–100
±10
–2.5
VGS(off)
yfs
RDS(on)
RDS(on)
Ciss
Coss
Crss
–1.0
2
4
95
150
550
370
70
Continued on next page.
125
205
Features
Low ON resistance
Ultrahigh-speed switching.
Composite type with two 4V-drive P-channel MOSFETs
facilitating high-density mounting.
Matched pair capability.
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