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參數(shù)資料
| 型號： | FUMG9N-WBFBP-05C |
| 廠商： | 江蘇長電科技股份有限公司 |
| 英文描述： | TRANSISTOR |
| 中文描述： | 晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 218K |
| 代理商： | FUMG9N-WBFBP-05C |
WBFBP-05C
(2×2×0.5)
unit: mm
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-05C
Digital transistors (built-in resistors)
FUMG9N
TRANSISTOR
DESCRIPTION
Epitaxial planar type NPN silicon transistor
(Built-in resistor type)
FEATURES
z
Two DTC114E in a package.
z
Mounting cost and area can be cut in half.
APPLICATION
Dual Digital Transistors for Inverter Drive
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
Equivalent circuit MARKING:G9
G9
Absolute maximum ratings(Ta=25
℃
)
Parameter
Symbol
Limits
Unit
Supply voltage
V
CC
50
V
Input voltage
V
IN
-10~40
V
I
O
50
Output current
I
C(MAX)
100
mA
Power dissipation
Pd
150
mW
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-55~150
℃
Electrical characteristics (Ta=25
℃
)
Parameter
Symbol
Min.
Typ
Max.
Unit
Conditions
V
I(off)
0.5
V
CC
=5V ,I
O
=100μA
Input voltage
V
I(on)
3
V
V
O
=0.3V ,I
O
=10 mA
Output voltage
V
O(on)
0.3
V
I
O
/I
I
=10mA/0.5mA
Input current
I
I
0.88
mA
V
I
=5V
Output current
I
O(off)
0.5
μA
V
CC
=50V, V
I
=0
DC current gain
G
I
30
V
O
=5V ,I
O
=5mA
Input resistance
R
1
7
10
13
K
Resistance ratio
R
2
/R
1
0.8
1
1.2
Transition frequency
f
T
250
MHz
V
CE
=10V ,I
E
=-5mA,f=100MHz
1
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