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參數(shù)資料
| 型號： | FTD2017 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Load Switching Applications |
| 中文描述： | 負荷開關(guān)應用 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 42K |
| 代理商： | FTD2017 |
No.6361-3/4
FTD2017
0
0
1
2
3
4
5
6
7
8
45
25
15
20
40
30
–
35
5
10
Total Gate Charge, Qg
9
10
VGS -- Qg
VDS=10V
ID=5A
IT00930
A S O
100m
DCopeaion
<10
μ
s
1m
10m
IDP=20A
ID=5A
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
100
10
1.0
0.1
0.01
2 3
5 7
Drain-to-Source Voltage, VDS– V
2 3
5 7
2 3
5 7
2 3
5 7
0.01
100
IT00931
Operation in this
area is limited by RDS(on).
0
2
4
6
8
10
12
14
16
18
20
10
100
10000
1000
7
5
3
2
7
5
3
2
7
5
3
2
Ciss, Coss, Crss -- VDS
f=1MHz
0.1
1.0
2
3
5
7
2
3
5
7
1.0
1000
100
7
5
3
2
7
5
3
2
10
7
5
3
2
10
SW Time -- ID
VDD=10V
VGS=4V
Ciss
Coss
Crss
td(on)
td(off)
tr
tf
IT00928
IT00929
0
0
20
40
60
0.5
1.0
80
100
120
1.5
1.3
0.8
140
160
PD -- Ta
IT00932
IT00926
IT00927
0.001
0.01
0.1
0.01
2 3
5 7
2 3
5 7
2 3
5 7
2 3
5 7
100
10
1.0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
10
1.0
y
fs
-- ID
VDS=10V
75
°
C
25
°
C
Ta=-25
°
C
0.2
0.4
Diode Forward Voltage, VSD– V
0.6
1.0
0.9
0.8
1.2
0.3
0.5
0.7
1.1
0.001
0.01
0.1
10
1.0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
IF -- VSD
VGS = 0
-5
°
C
2
°
C
T=5
°
C
Drain Current, ID– A
F
F
Drain Current, ID– A
S
C
Drain-to-Source Voltage, VDS– V
nC
G
D
Ta=25
°
C
Single pulse
Mounted on a ceramic board (1000mm
2
×
0.8mm)
Ambient Temperature, Ta –
C
A
Mounted on a ceramic board (1000mm
2
×
0.8mm)
Toa Dsipton
1unt
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FTD2017A-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 20V 6A TSSOP8 |
| FTD2017C | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| FTD2017M | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| FTD2017M-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 20V 6A TSSOP8 |
| FTD2017R | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device |
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