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參數(shù)資料
| 型號(hào)： | FTD2016 |
| 英文描述： | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 4A I(D) | TSSOP |
| 中文描述： | 晶體管| MOSFET的|配對(duì)| N溝道| 30V的五（巴西）直| 4A條（丁）| TSSOP封裝 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 21K |
| 代理商： | FTD2016 |
FTD2016
HD 010528-1/2
Features
Low ON-resistance.
2.5V drive.
Mounting height 1.1mm.
Composite type, facilitating high-density mounting.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN*0000
FTD2016
Package Dimensions
unit : mm
2155A
[FTD2016]
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET Transistor
1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
SANYO : TSSOP8
6
3.0
0.425
0.65
4
0
(
0
0.125
8
5
1
4
0.25
1
0
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
Ratings
Unit
V
V
A
A
W
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
30
±
10
4
PW
≤
10
μ
s, duty cycle
≤
1%
Mounted on a ceramic board (1000mm
2
0.8mm) 1unit
Mounted on a ceramic board (1000mm
2
0.8mm)
20
0.8
1.3
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : D2016 Continued on next page.
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=
±
8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=4A
30
V
μ
A
μ
A
V
S
1
±
10
1.3
0.4
7.7
11
Preliminary
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