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參數(shù)資料
| 型號(hào)： | FTD2005 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Ultrahigh-Speed Switching Applications |
| 中文描述： | 超高速開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 33K |
| 代理商： | FTD2005 |
No.6429-3/4
FTD2005
1.0
0.1
2
3
5
7
2
3
100
7
5
3
2
10
7
5
3
2
SW Time -- ID
VDD=10V
VGS=4V
td(on)
td(off)
tr
tf
IT00983
0
10
2
100
1000
7
5
3
2
7
5
3
2
20
16
18
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
Coss
Crss
IT00984
0
0
1
2
3
4
5
6
7
8
6
5
1
9
10
VGS -- Qg
VDS=10V
ID=1A
IT00985
A S O
2
3
5
7
2
3
5
7
2
3
5
7
10
1.0
0.1
0.01
2
3
5
7
2
3
Drain-to-Source Voltage, VDS– V
5
7
0.1
2
3
5
IT00986
100
μ
s
IDP=4A
Operation in this area is
limited by RDS(on).
DCopeaion
10ms
100ms
0
0
20
0.2
0.4
0.6
120
0.8
1.0
1.2
140
160
PD -- Ta
IT00987
0
0
0.2
0.4
0.2
0.6
0.4
0.6
0.8
1.0
0.8
1.0
PD(FET1) -- PD(FET2)
IT00988
ID=1A
IT00981
0.01
0.1
2
3
5
Drain Current, ID– A
1.0
5
7
2
3
10
1.0
7
5
3
2
7
5
3
2
y
fs
-- ID
VDS=10V
75
°
C
25
°
C
T=-25
°
C
IT00982
0
0.3
Diode Forward Voltage,VSD– V
0.9
0.6
1.2
1.5
0.001
0.01
1.0
0.1
7
5
3
2
7
5
3
2
7
5
3
2
10
7
5
3
2
IF -- VSD
VGS = 0
-
°
C
2
°
C
T7
°
C
F
F
Drain Current, ID– A
S
C
Drain-to-Source Voltage, VDS– V
Total Gate Charge, Qg – nC
G
D
Mounted on a ceramic board (1000mm
2
×
0.8mm)
Ta=25
°
C
Single pulse
1 unit
Ambient Temperature, Ta –
C
A
A
Mounted on a ceramic board (1000mm
2
×
0.8mm)
Toa Dsipaion
1unt
Allowable Power Dissipation (FET2), PD– W
Mounedonaceamcboad(1000mm
2
×
08mm
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|---|---|
| FTD2007 | Ultrahigh-Speed Switching Applications |
| FTD2008 | DC / DC Converter Applications |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FTD2007 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| FTD2008 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:DC / DC Converter Applications |
| FTD200CN2-S | 制造商:Tohnichi Mtg. 功能描述:Bulk |
| FTD2011 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Load Switching Applications |
| FTD2011A | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N CHANNEL MOS SILICON TRANSISTOR |
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