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參數(shù)資料
| 型號： | FT0809BJ00TU |
| 元件分類： | 晶閘管 |
| 英文描述： | 200 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 287K |
| 代理商： | FT0809BJ00TU |
Electrical Characteristics
FAGOR
TRIAC
CURRENT
CASE
VOLTAGE
SENSITIVITY
FT
08
08 B
J 00
FORMING
TU
PACKAGING
PART NUMBER INFORMATION
(1) Minimum IGT is guaranted at 5% of IGT max.
(2) For either polarity of electrode MT2 voltage with reference to electrode MT1.
PARAMETER
CONDITIONS
SENSITIVITY
Unit
SYMBOL
VD = 12 VDC, RL = 33W,
Quadrant
°C/W
60
Q1÷Q4
Q4
08
10
Apr - 08
FT08...J
mA
MAX
IGT (1)
Q1÷Q3
Gate Trigger Current
VD = 12 VDC, RL = 33W,
mA
Q1÷Q3
VGT
Gate Trigger Voltage
VGD
Gate Non Trigger Voltage
Off-State Leakage Current
IDRM/IRRM
IH (2)
Rth(j-a)
Thermal Resistance
VD = VDRM,
Tj = 125 °C
Tj = 25 °C
VR = VRRM,
IT = 100 mA, Gate open,
VD = VDRM, RL = 3.3 KW,
rd (2)
Dynamic resistance
Latching Current
IG = 1.2 IGT, Tj = 25 °C
dV/dt (2) Critical Rate of Voltage Rise
Rth(j-c)
Thermal Resistance
Vt (o) (2)
Threshold Voltage
Tj = 125 °C
VD = 0.67 x VDRM, Gate open
for AC 360° conduction angle
Junction-Ambient
Junction-Case
Holding Current
Tj = 25 °C
Tj = 125 °C
VTM (2)
On-state Voltage
IT = 11 Amp, tp = 380 s, Tj = 25 °C
IL
(dl/dt)c (2)
S = 1 cm2
1.6
°C/W
MAX
MIN
5
A
1
mA
50
mW
0.85
V
1.55
V
2.98
A/ms
5.4
A/ms
MIN
40
V/s
Q2
MAX
30
mA
Q1,Q3,Q4
Q1,Q3
Q1÷Q4
Q1÷Q3
1.3
0.2
15
mA
MAX
MIN
MAX
mA
V
Tj = 125 °C
Critical Rate of Current Rise
Tj = 125 °C
Tj = 25 °C
(dv/dt)c = 0.1 V/s
(dv/dt)c = 10 V/s
25
INSULATED LOGIC LEVEL TRIAC
30
10
04
5
09
10
-
25
15
20
1.5
3.5
2.98
5.4
10
1.3
-
10
-
40
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