參數(shù)資料
型號： FSX027X
廠商： SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
英文描述： GaAs FET & HEMT Chips
中文描述： 砷化鎵場效應(yīng)管
文件頁數(shù)： 3/4頁
文件大小： 53K
代理商： FSX027X
3
S-PARAMETERS
VDS= 8V, IDS= 75mA
S21
MAG
ANG
FREQUENCY
(MHZ)
S11
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
1000
.981
-41.2
7.117
153.2
.023
67.6
.633
-14.9
2000
.946
-75.2
6.065
130.8
.040
50.3
.588
-26.6
3000
.913
-100.3
5.015
113.3
.050
37.4
.548
-35.2
4000
.882
-118.9
4.168
99.4
.055
28.8
.523
-42.1
5000
.877
-132.7
3.520
87.9
.058
22.2
.506
-48.4
6000
.867
-143.6
3.026
77.9
.060
17.3
.498
-54.7
7000
.860
-152.5
2.644
69.0
.062
13.6
.499
-60.9
8000
.854
-159.9
2.336
60.9
.063
10.2
.504
-67.1
9000
.849
-166.3
2.089
53.1
.064
7.0
.515
-73.4
10000
.845
-172.0
1.887
45.8
.065
4.4
.524
-79.0
11000
.841
-177.2
1.716
36.7
.065
2.1
.539
-84.7
12000
.837
178.3
1.569
32.0
.065
0.0
.550
-90.3
13000
.834
174.1
1.441
25.4
.066
-1.0
.561
-95.7
14000
.829
169.8
1.332
18.9
.067
-3.5
.574
-101.2
15000
.826
166.1
1.238
12.6
.067
-5.4
.589
-106.8
16000
.824
162.7
1.155
6.6
.068
-6.1
.603
-112.5
17000
.817
159.3
1.074
.4
.069
-9.1
.623
-118.0
18000
.813
155.9
1.001
-5.5
.068
-10.4
.642
-123.1
19000
.814
152.8
.543
-11.3
.069
-11.2
.657
-127.9
20000
NOTE:*
The data includes bonding wires.
n: number of wires
.811
150.1
.888
-16.9
.069
-13.4
.672
-132.7
Gate
Drain
Source n=4 (0.2mm length, 25μm Dia Au wire)
n=1 (0.2mm length, 25μm Dia Au wire)
n=1 (0.2mm length, 25μm Dia Au wire)
FSX027X
GaAs FET & HEMT Chips
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