參數(shù)資料
型號: FSX017X
廠商: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
英文描述: GaAs FET & HEMT Chips
中文描述: 砷化鎵場效應管
文件頁數(shù): 4/4頁
文件大小: 86K
代理商: FSX017X
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS EUROPE, GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
4
CHIP OUTLINE
Source
Source
Drain
(Unit:
μ
m)
Die Thickness: 100
±
20
μ
m
4
±
2
2
Gate
100
100
100
100
1
1
420
±
20
FSX017X
GaAs FET & HEMT Chips
相關PDF資料
PDF描述
FSX027WF General Purpose GaAs FET
FSX027X GaAs FET & HEMT Chips
FT2000A Fast Silicon Rectifiers
FT2000B Fast Silicon Rectifiers
FT2000D Fast Silicon Rectifiers
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