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參數(shù)資料
| 型號(hào)： | FSU10B60 |
| 廠商： | NIHON INTER ELECTRONICS CORP |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | FOR POWER FACTOR IMPROVEMENT HIGH FREQUENCY RECTIFICATION |
| 中文描述： | 10 A, 600 V, SILICON, RECTIFIER DIODE |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 43K |
| 代理商： | FSU10B60 |
FRD
Type :
FSU10B60
OUTLINE DRAWING
Maximum Ratings
Approx Net Weight:1.7g
Rating
Symbol
FSU10B60
Unit
Repetitive Peak Reverse Voltage
V
RRM
600
V
Average Rectified Output Current
I
O
10
Tc=60
°
C
50 Hz Half Sine Wave
Resistive Load
15.7
50 Hz Half Sine Wave,1cycle
Non-repetitive
- 40 to + 150
- 40 to + 150
Recommended value
A
RMS Forward Current
I
F(RMS)
A
Surge Forward Current
I
FSM
100
A
Operating J unctionTemperature Range
Storage Temperature Range
Mounting torque
Electrical
Thermal Characteristics
Tjw
Tstg
°
C
°
C
N
m
0.5
Characteristics
Symbol
I
RM
V
FM
Conditions
Min.
-
-
Typ. Max. Unit
-
30
2.3
2.7
Peak Reverse Current
Peak Forward Voltage
Tj= 25
°
C, V
RM
= V
RRM
Tj= 25
°
C, I
FM
= 10A
I
FM
= 10A,
-di/dt= 50 A/
μ
s, Ta= 25
°
C
Rth(j-c) J unction to Case
Rth(c-f) Case to Fin
μ
A
V
Reverse Recovery Time
trr
-
25
40
ns
-
-
-
-
4
Thermal Resistance
1.5
°
C/W
For Power Factor Improvement High Frequency Rectification
FEATURES
* Fully Molded Isolation Case
* Ultra – Fast Recovery
* Low Forward Voltage Drop
* Low Power Loss, High Efficiency
* High Surge Capability
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