參數(shù)資料
型號(hào)： FSU01LG
廠(chǎng)商： SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
英文描述： General Purpose GaAs FET
中文描述： 通用砷化鎵場(chǎng)效應(yīng)管
文件頁(yè)數(shù)： 3/5頁(yè)
文件大?。?/td> 104K
代理商： FSU01LG
3
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
S11
S22
180
°
+90
°
0.2
0
°
-90
°
S21
S12
SCALE FOR |S21|
2
.05
0.1
1
3
4
0.4 GHz
0.4 GHz
2
2
2
2
1
1
1
1
3
3
3
3
250
100
10
25
50
4 GHz
4 GHz
4 GHz
4 GHz
0.4 GHz
SCALE FOR |S12|
0.4 GHz
S-PARAMETERS
VDS=6V, IDS= 40mA
S21
MAG
ANG
FREQUENCY
(MHZ)
S11
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
400
.987
-13.8
4.507
168.3
.011
77.9
.812
-6.7
600
.985
-20.3
4.488
162.8
.016
76.2
.812
-10.0
800
.974
-27.1
4.421
157.0
.021
72.0
.807
-13.2
1000
.966
-34.1
4.367
151.3
.026
68.6
.803
-16.4
1200
.954
-40.0
4.309
146.4
.030
65.2
.793
-19.8
1400
.936
-47.0
4.212
140.5
.035
60.3
.786
-23.0
1600
.935
-53.3
4.158
135.2
.038
56.5
.778
-25.8
1800
.910
-58.7
4.037
130.8
.043
51.8
.766
-28.9
2000
.904
-65.4
3.980
125.2
.047
48.8
.761
-31.8
2200
.888
-71.0
3.885
120.7
.049
45.2
.748
-34.3
2400
.871
-77.0
3.797
115.5
.052
42.6
.739
-37.5
2600
.856
-82.5
3.696
110.9
.055
39.5
.729
-40.2
2800
.844
-88.1
3.609
106.2
.057
35.7
.716
-43.0
3000
.829
-93.3
3.511
101.9
.060
30.9
.704
-45.8
3200
.812
-98.4
3.400
97.7
.060
27.2
.692
-47.9
3400
.798
-103.1
3.323
93.8
.061
26.0
.687
-50.3
3600
.788
-107.9
3.249
89.7
.062
22.9
.681
-52.8
3800
.779
-112.6
3.176
85.6
.063
20.9
.674
-55.3
4000
.769
-117.3
3.101
81.7
.063
19.4
.668
-58.0
FSU01LG
General Purpose GaAs FET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FSU02LG 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:Small Signal GaAs FETs, Medium Power, 17dB, 2GHz, 80mA, Bulk
FSU05A60 制造商:NIEC 制造商全稱(chēng):Nihon Inter Electronics Corporation 功能描述:FRD - Low Forward Voltage Drop
FSU05B60 制造商:NIEC 制造商全稱(chēng):Nihon Inter Electronics Corporation 功能描述:FOR POWER FACTOR IMPROVEMENT HIGH FREQUENCY RECTIFICATION
FSU1004 制造商:Ssac 功能描述:
FSU10A30 制造商:NIEC 制造商全稱(chēng):Nihon Inter Electronics Corporation 功能描述:For Power Factor Improvement High Frequency Rectification
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