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參數(shù)資料
| 型號： | FSPS134R4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 16A I(D) | TO-257AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 150伏五（巴西）直| 16A條（?。﹟對257AA |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 123K |
| 代理商： | FSPS134R4 |
2001 Fairchild Semiconductor Corporation
FSPS134R, FSPS134F Rev. B
Source to Drain Diode Specifications
PARAMETER
SYMBOL
V
SD
t
rr
Q
RR
TEST CONDITIONS
MIN
-
-
-
TYP
-
-
1.2
MAX
1.2
200
-
UNITS
V
ns
μ
C
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 16A
I
SD
= 16A, dI
SD
/dt = 100A/
μ
s
Electrical Specifications up to 300 krad
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
30V, V
DS
= 0V
V
GS
= 0, V
DS
= 120V
V
GS
= 12V, I
D
= 16A
V
GS
= 12V, I
D
= 11A
MIN
MAX
MIN
MAX
UNITS
100 krad
150
2.0
-
-
-
-
300 krad
150
1.5
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
1. Pulse test, 300
μ
s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
-
-
V
V
nA
μ
A
V
4.5
100
25
1.58
0.094
4.5
100
50
1.92
0.110
Single Event Effects (SEB, SEGR)
Note 4
TEST
SYMBOL
SEESOA
ENVIRONMENT
(NOTE 5)
(NOTE 6)
TYPICAL LET
(MeV/mg/cm)
37
60
60
82
82
APPLIED
V
GS
BIAS
(V)
-10
-2
-8
0
-5
(NOTE 7)
MAXIMUM
V
DS
BIAS
(V)
150
150
120
120
90
TYPICAL RANGE (
μ
)
36
32
32
28
28
Single Event Effects Safe Operating Area
NOTES:
4. Testing conducted at Brookhaven National Labs or Texas A&M.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Ion Species: LET = 37, Br or Kr; LET = 60, I or Xe; LET = 82, Au.
7. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
0
0
LET = 60MeV/mg/cm
2
, RANGE = 32
μ
LET = 82MeV/mg/cm
2
, RANGE = 28
μ
LET = 37MeV/mg/cm
2
, RANGE = 36
μ
-4
-8
-12
V
GS
(V)
150
100
50
V
D
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
TEMP = 25
o
C
-2
-6
-10
V
D
120
80
40
0
0
NEGATIVE V
GS
BIAS (V)
20
LET = 37
LET = 82
LET = 60
160
200
5
10
15
25
30
35
FSPS134R, FSPS134F
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|---|---|
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