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參數(shù)資料
| 型號(hào)： | FSPL134F4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-205AF |
| 中文描述： | 晶體管| MOSFET的| N溝道| 150伏五（巴西）直| 7A條（?。﹟至205AF |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 90K |
| 代理商： | FSPL134F4 |
2001 Fairchild Semiconductor Corporation
FSPL130R, FSPL130F Rev. B
FIGURE 3. TYPICAL DRAIN INDUCTANCE REQUIRED TO
LIMIT GAMMA DOT CURRENT TO I
AS
FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 5. FORWARD BIAS SAFE OPERATING ARE A
FIGURE 6. BASIC GATE CHARGE WAVEFORM
FIGURE 7. TYPICAL NORMALIZED r
DS(ON)
vs JUNCTION
TEMPERATURE
FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS
Performance Curves
Unless Otherwise Specified
(Continued)
300
100
10
L
DRAIN SUPPLY (V)
1000
ILM = 10A
300A
1E-4
1E-5
1E-6
30
100A
30A
1E-7
1E-3
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
100
50
0
-50
0
10
14
12
2
4
6
8
100
10
1
1
10
100
300
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
μ
s
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
10ms
1ms
200
0.10
T
C
= 25
o
C
CHARGE
Q
GD
Q
G
V
G
Q
GS
12V
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
T
J
,
JUNCTION TEMPERATURE (
o
C)
N
D
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 9A
4
2
0
80
40
0
I
D
,
100
60
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
5
3
1
V
GS
= 6V
V
GS
= 8V
V
GS
= 10V
V
GS
= 12V
V
GS
= 14V
V
GS
= 6V
FSPL130R, FSPL130F
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| FSPL134R4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-205AF |
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| FSPL230F3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
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