參數(shù)資料
型號： FSPL130R3
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 12A I(D) | TO-205AF
中文描述： 晶體管| MOSFET的| N溝道| 100V的五（巴西）直| 12A條（?。﹟至205AF
文件頁數(shù)： 2/7頁
文件大?。?/td> 90K
代理商： FSPL130R3
2001 Fairchild Semiconductor Corporation
FSPL130R, FSPL130F Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
FSPL130R, FSPL130F
100
100
UNITS
V
V
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100
μ
H (See Test Figure). . . . . . . . . . . . . . . . . . . . I
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
S
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical)
12 (Note)
9
48
±
30
A
A
A
V
25
10
0.20
48
12
48
W
W
W/
o
C
A
A
A
o
C
o
C
-55 to 150
300
1.0 (Typical)
g
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: Current is limited by the package capability.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
100
-
-
V
Gate Threshold Voltage
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
-
-
5.5
V
2.0
-
4.5
V
1.0
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 80V,
V
GS
= 0V
-
-
25
μ
A
μ
A
-
-
250
Gate to Source Leakage Current
I
GSS
V
GS
=
±
30V
-
-
100
nA
-
-
200
nA
Drain to Source On-State Voltage
V
DS(ON)
r
DS(ON)12
V
GS
= 12V, I
D
= 12A
I
D
= 9A,
V
GS
= 12V
-
-
0.912
V
Drain to Source On Resistance
T
C
= 25
o
C
T
C
= 125
o
C
-
0.068
0.075
-
-
0.118
Turn-On Delay Time
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(12)
Q
gs
Q
gd
Q
g(20)
Q
g(TH)
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JC
V
DD
= 50V, I
D
= 12A,
R
L
= 4.17
, V
GS
= 12V,
R
GS
= 7.5
-
-
20
ns
Rise Time
-
-
50
ns
Turn-Off Delay Time
-
-
35
ns
Fall Time
-
-
30
ns
Total Gate Charge
V
GS
= 0V to 12V
V
DD
= 50V,
I
D
= 12A
-
35
40
nC
Gate Charge Source
-
10
13
nC
Gate Charge Drain
-
9
12
nC
Gate Charge at 20V
V
GS
= 0V to 20V
V
GS
= 0V to 2V
I
D
= 12A, V
DS
= 15V
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
56
-
nC
Threshold Gate Charge
-
3
-
nC
Plateau Voltage
-
6
-
V
Input Capacitance
-
1570
-
pF
Output Capacitance
-
380
-
pF
Reverse Transfer Capacitance
-
20
-
pF
Thermal Resistance Junction to Case
-
-
5.0
o
C/W
FSPL130R, FSPL130F
相關(guān)PDF資料
PDF描述
FSPL130R4 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 12A I(D) | TO-205AF
FSPL134D1 TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-205AF
FSPL134F3 TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-205AF
FSPL134F4 TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-205AF
FSPL134R3 TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-205AF
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FSPL130R4 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 12A I(D) | TO-205AF
FSPL134D1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-205AF
FSPL134F3 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-205AF
FSPL134F4 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-205AF
FSPL134R3 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-205AF
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