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參數(shù)資料
| 型號(hào)： | FSPL130F4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 12A I(D) | TO-205AF |
| 中文描述： | 晶體管| MOSFET的| N溝道| 100V的五（巴西）直| 12A條（丁）|至205AF |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 90K |
| 代理商： | FSPL130F4 |
2001 Fairchild Semiconductor Corporation
FSPL130R, FSPL130F Rev. B
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
t
rr
Q
RR
I
SD
= 12A
I
SD
= 12A, dI
SD
/dt = 100A/
μ
s
-
-
1.5
V
Reverse Recovery Time
-
-
160
ns
μ
C
Reverse Recovery Charge
-
0.68
-
Electrical Specifications up to 300 krad
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
UNITS
100 krad
300 krad
Drain to Source Breakdown Volts
(Note 3)
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
30V, V
DS
= 0V
V
GS
= 0, V
DS
= 80V
V
GS
= 12V, I
D
= 12A
V
GS
= 12V, I
D
= 9A
100
-
100
-
V
Gate to Source Threshold Volts
(Note 3)
2.0
4.5
1.5
4.5
V
Gate to Body Leakage
(Notes 2, 3)
-
100
-
100
nA
μ
A
V
Zero Gate Leakage
(Note 3)
-
25
-
50
Drain to Source On-State Volts
(Notes 1, 3)
-
0.912
-
0.972
Drain to Source On Resistance
(Notes 1, 3)
-
0.075
-
0.080
NOTES:
1. Pulse test, 300
μ
s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
Note 4
TEST
SYMBOL
ENVIRONMENT
(NOTE 5)
APPLIED
V
GS
BIAS
(V)
(NOTE 7)
MAXIMUM
V
DS
BIAS
(V)
(NOTE 6
)
TYPICAL LET
(MeV/mg/cm)
TYPICAL RANGE (
μ
)
36
Single Event Effects Safe Operating Area
SEESOA
37
-5
100
60
32
-2
80
82
28
0
60
82
28
-2
30
NOTES:
4. Testing conducted at Brookhaven National Labs or Texas A&M.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Ion Species: LET = 37, Br or Kr; LET = 60, I or Xe; LET = 82, Au.
7. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL SEE SIGNATURE CURV E
120
80
40
00
-5
V
GS
(V)
20
100
60
V
D
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
TEMP = 25
o
C
-7
-6
-1
-2
-3
-4
LET = 60MeV/mg/cm
2
, RANGE = 32
μ
LET = 82MeV/mg/cm
2
, RANGE = 28
μ
LET = 37MeV/mg/cm
2
, RANGE = 36
μ
0
40
80
100
60
20
20
0
NEGATIVE V
GS
BIAS (V)
V
D
LET = 82
LET = 60
LET = 37
120
24
4
8
12
16
FSPL130R, FSPL130F
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| FSPL134F4 | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-205AF |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSPL130R3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 12A I(D) | TO-205AF |
| FSPL130R4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 12A I(D) | TO-205AF |
| FSPL134D1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-205AF |
| FSPL134F3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-205AF |
| FSPL134F4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-205AF |
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