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參數(shù)資料
| 型號： | FSL23A0R4 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs |
| 中文描述： | 6 A, 200 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 72K |
| 代理商： | FSL23A0R4 |
4-1
File Number
4476.2
FSL23A0D, FSL23A0R
6A, 200V, 0.350 Ohm, Radiation Hardened,
SEGR Resistant, N-Channel Power
MOSFETs
The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs
specifically designed for commercial and military space
applications. Enhanced Power MOSFET immunity to Single
Event Effects (SEE), Single Event Gate Rupture (SEGR) in
particular, is combined with 100K RADS of total dose
hardness to provide devices which are ideally suited to harsh
space environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Formerly available as type TA17697.
Features
6A, 200V, r
DS(ON)
= 0.350
Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown and
V
GS
of 10V Off-Bias
Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
Photo Current
- 3.0nA Per-RAD(Si)/s Typically
Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm
2
- Usable to 1E14 Neutrons/cm
2
Symbol
Package
TO-205AF
Ordering Information
RAD LEVEL
SCREENING LEVEL
PART NUMBER/BRAND
10K
Commercial
FSL23A0D1
10K
TXV
FSL23A0D3
100K
Commercial
FSL23A0R1
100K
TXV
FSL23A0R3
100K
Space
FSL23A0R4
D
G
S
S
G
D
Data Sheet
June 1999
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 2000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FSL23A0D3 | 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs |
| FSL23A0R1 | 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs |
| FSL23A4D | RECTIFIER BRIDGE 3A 600V 50A-ifsm 1.2V-vf 10uA-ir PBPC3 200/BOX |
| FSL23A4D1 | RECTIFIER BRIDGE 3A 1000V 50A-ifsm 1.2V-vf 10uA-ir PBPC3 200/BOX |
| FSL23A4D3 | RECTIFIER BRIDGE 6A 100V 125A-ifsm 1.1V-vf 10uA-ir PBPC3 200/BOX |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSL23A4D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSL23A4D1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSL23A4D3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSL23A4R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSL23A4R1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
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