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參數(shù)資料
| 型號(hào)： | FSJ160D |
| 廠商： | Intersil Corporation |
| 英文描述： | 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| 中文描述： | 第70A，100V的，0.022歐姆，拉德硬，SEGR耐，N溝道功率MOSFET |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 60K |
| 代理商： | FSJ160D |
3-1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
June 1998
FSJ160D, FSJ160R
70A, 100V, 0.022 Ohm, Rad Hard,
SEGR Resistant, N-Channel Power MOSFETs
Features
70A, 100V, r
DS(ON)
= 0.022
Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown and
V
GS
of 10V Off-Bias
Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
Photo Current
- 9nA Per-RAD(Si)/s Typically
Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm
2
- Usable to 3E14 Neutrons/cm
2
Formerly available as type TA17666.
Description
The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs specif-
ically designed for commercial and military space applica-
tions. Enhanced Power MOSFET immunity to Single Event
Effects (SEE), Single Event Gate Rupture (SEGR) in particu-
lar, is combined with 100K RADS of total dose hardness to
provide devices which are ideally suited to harsh space envi-
ronments. The dose rate and neutron tolerance necessary
for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of
voltage, current and
Numerous packaging options are also available.
on-resistance ratings.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be oper-
ated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent
of
MIL-S-19500,
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
or
Space
equivalent
of
Symbol
Package
TO-254AA
Ordering Information
RAD LEVEL
SCREENING LEVEL
PART NUMBER/BRAND
10K
Commercial
FSJ160D1
10K
TXV
FSJ160D3
100K
Commercial
FSJ160R1
100K
TXV
FSJ160R3
100K
Space
FSJ160R4
D
G
S
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
S
G
D
File Number
4338.1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FSJ160D1 | 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSJ160D3 | 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSJ160R | 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSJ160R1 | 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSJ160R3 | 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSJ160D1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSJ160D3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSJ160R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSJ160R1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSJ160R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
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