參數(shù)資料
型號： FSGJ264R
廠商： Intersil Corporation
英文描述： Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場效應(yīng)管)
中文描述： 抗輻射，抗SEGR N溝道功率MOSFET（抗輻射?溝道馬鞍山場效應(yīng)管）
文件頁數(shù)： 4/8頁
文件大?。?/td> 79K
代理商： FSGJ264R
4
FIGURE 3. TYPICAL DRAIN INDUCTANCE REQUIRED TO
LIMIT GAMMA DOT CURRENT TO I
AS
FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. BASIC GATE CHARGE WAVEFORM
FIGURE 7. TYPICAL NORMALIZED r
DS(ON)
vs JUNCTION
TEMPERATURE
FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS
Performance Curves
Unless Otherwise Specified
(Continued)
300
100
10
L
DRAIN SUPPLY (V)
1000
ILM = 10A
300A
1E-4
1E-5
1E-6
30
100A
30A
1E-7
1E-3
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
100
50
0
-50
0
48
8
40
32
24
16
100
10
1
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
100
0.1
500
I
D
,
100
μ
s
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
10ms
1ms
1000
T
C
= 25
o
C
CHARGE
Q
GD
Q
G
V
G
Q
GS
12V
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
D
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 27A
10
8
6
4
2
0
200
160
120
80
40
0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
V
GS
= 6V
V
GS
= 8V
V
GS
= 10V
V
GS
= 12V
V
GS
= 14V
V
GS
= 6 V
DESCENDING ORDER
FSGJ264R
相關(guān)PDF資料
PDF描述
FSGL230R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場效應(yīng)管)
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