參數(shù)資料
型號: FSAM30SH60A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 運動控制電子
英文描述: 16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor
中文描述: AC MOTOR CONTROLLER, 60 A, DMA32
文件頁數(shù): 12/17頁
文件大?。?/td> 989K
代理商: FSAM30SH60A
2002 Fairchild Semiconductor Corporation
F
Rev. A, September 2002
Time Charts of SPMs Protective Function
P1 : Normal operation - IGBT ON and conducting current
P2 : Under-Voltage detection
P3 : IGBT gate interrupt
P4 : Fault signal generation
P5 : Under-Voltage reset
P6 : Normal operation - IGBT ON and conducting current
Fig. 10. Under-Voltage Protection (Low-side)
P1 : Normal operation - IGBT ON and conducting current
P2 : Under-Voltage detection
P3 : IGBT gate interrupt
P4 : No fault signal
P5 : Under-Voltage reset
P6 : Normal operation - IGBT ON and conducting current
Fig. 11. Under-Voltage Protection (High-side)
Internal IGBT
Gate-Emitter Voltage
Input Signal
Output Current
Fault Output Signal
Control Supply Voltage
P1
P2
P3
P4
P6
P5
UV detect
UV reset
Internal IGBT
Gate-Emitter Voltage
Input Signal
Output Current
Fault Output Signal
Control Supply Voltage
V
BS
P1
P2
P3
P4
P6
P5
UV detect
UV reset
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相關代理商/技術參數(shù)
參數(shù)描述
FSAM30SH60A 制造商:Fairchild Semiconductor Corporation 功能描述:POWER SUPPLY IC 制造商:Fairchild Semiconductor Corporation 功能描述:Power Supply IC
FSAM30SH60A_03 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:SPMTM (Smart Power Module)
FSAM30SM60A 功能描述:IGBT 模塊 600V/30A/ SPM2 RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FSAM30SM60SL 功能描述:IGBT 模塊 600V/30A Smart Power RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FSAM50SM60A 功能描述:IGBT 晶體管 600V -50A SMART POWER MODULE RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube