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參數(shù)資料
| 型號： | FS5AS-3 |
| 廠商： | POWEREX INC |
| 元件分類： | JFETs |
| 英文描述： | Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
| 中文描述： | 5 A, 150 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MP-3, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 42K |
| 代理商： | FS5AS-3 |
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS5AS-3
HIGH-SPEED SWITCHING USE
0
10
20
30
40
50
0
200
50
100
150
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
P
D
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
D
D
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS
= 20V
T
C
= 25°C
Pulse Test
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS
= 20V
T
C
= 25°C
Pulse Test
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
10
1
2
3
2
3
5
7
10
0
2
3
5
7
10
–1
2
3
5
7
10
1
5 7
2
10
2
3 5 7
2
10
3
3 5 7
2 3
2
tw = 10
m
s
T
C
= 25°C
Single Pulse
100
m
s
10ms
DC
1ms
10V
0
2
4
6
8
10
0
1.0
2.0
3.0
4.0
5.0
7V 6V
5V
4V
P
D
= 30W
10V
0
1.0
2.0
3.0
4.0
5.0
0
0.4
0.8
1.2
1.6
2.0
7V 6V
5V
4V
PERFORMANCE CURVES
ELECTRICAL CHARACTERISTICS
(Tch = 25
°
C)
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
V
μ
A
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
°
C/W
ns
150
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.0
0.28
0.56
6.5
600
100
30
18
18
30
15
1.0
—
85
—
±
0.1
0.1
4.0
0.38
0.76
—
—
—
—
—
—
—
—
1.5
4.17
—
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
I
D
= 1mA, V
GS
= 0V
V
GS
=
±
20V, V
DS
= 0V
V
DS
= 150V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 2A, V
GS
= 10V
I
D
= 2A, V
GS
= 10V
I
D
= 2A, V
DS
= 5V
V
DS
= 10V, V
GS
= 0V, f = 1MHz
V
DD
= 80V, I
D
= 2A, V
GS
= 10V, R
GEN
= R
GS
= 50
I
S
= 2A, V
GS
= 0V
Channel to case
I
S
= 5A, dis/dt = –100A/
μ
s
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