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參數(shù)資料
| 型號： | FS50KMJ-06 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH-SPEED SWITCHING USE |
| 中文描述： | 高速開關使用 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大小： | 43K |
| 代理商： | FS50KMJ-06 |
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50KMJ-06
HIGH-SPEED SWITCHING USE
0
20
40
60
80
100
0
0.4
0.8
1.2
1.6
2.0
T
C
= 125
°
C
75
°
C
25
°
C
V
GS
= 0V
Pulse Test
0
2
4
6
8
10
0
20
40
60
80
100
V
DS
= 10V
20V
40V
T
ch
= 25
°
C
I
D
= 50A
10
–1
10
0
2
3
4
5
7
10
1
2
3
4
5
7
–50
0
50
100
150
V
GS
= 10V
I
D
= 1/2I
D
Pulse Test
0
0.8
1.6
2.4
3.2
4.0
–50
0
50
100
150
V
DS
= 10V
I
D
= 1mA
0.4
0.6
0.8
1.0
1.2
1.4
–50
0
50
100
150
V
GS
= 0V
I
D
= 1mA
10
–2
10
–1
2
3
5
7
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
–4
23 57
23 57
23 57
23 57
10
0
23 57
10
1
23 57
10
2
10
–3
10
–2
10
–1
Single Pulse
0.5
0.2
0.1
0.05
0.02
0.01
D = 1.0
P
DM
tw
D
=
T
tw
T
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
G
G
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
S
S
CHANNEL TEMPERATURE Tch (
°
C)
D
D
°
C
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
G
V
G
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (
°
C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH t
w
(s)
T
t
(
°
C
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
D
D
°
C
CHANNEL TEMPERATURE Tch (
°
C)
D
(
°
C
D
(
°
C
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|---|---|
| FS50KMJ-06 | Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
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| FS50KMJ-2 | Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
| FS50KMJ-3 | HIGH-SPEED SWITCHING USE |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FS50KMJ-06F | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Nch Power MOS FET |
| FS50KMJ-06F(#B00) | 制造商:Renesas Electronics Corporation 功能描述: |
| FS50KMJ-06F-A8 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Nch Power MOS FET |
| FS50KMJ-2 | 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
| FS50KMJ-2(#B00) | 制造商:Renesas Electronics Corporation 功能描述: |
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