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參數(shù)資料
| 型號(hào)： | FS50ASJ-03 |
| 廠(chǎng)商： | POWEREX INC |
| 元件分類(lèi)： | JFETs |
| 英文描述： | ER 25C 25#12 PIN PLUG |
| 中文描述： | 50 A, 30 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MP-3, 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 38K |
| 代理商： | FS50ASJ-03 |
Feb.1999
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
MITSUBISHI Nch POWER MOSFET
FS50ASJ-03
HIGH-SPEED SWITCHING USE
V
μ
A
mA
V
m
m
V
S
pF
pF
pF
ns
ns
ns
ns
V
°
C/W
ns
30
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.5
15
21
0.375
28
1600
500
260
17
90
130
125
1.0
—
60
—
±
0.1
0.1
2.0
19
35
0.475
—
—
—
—
—
—
—
—
1.5
3.57
—
ELECTRICAL CHARACTERISTICS
(Tch = 25
°
C)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
I
D
= 1mA, V
GS
= 0V
V
GS
=
±
20V, V
DS
= 0V
V
DS
= 30V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 25A, V
GS
= 10V
I
D
= 25A, V
GS
= 4V
I
D
= 25A, V
GS
= 10V
I
D
= 25A, V
DS
= 10V
V
DS
= 10V, V
GS
= 0V, f = 1MHz
V
DD
= 15V, I
D
= 25A, V
GS
= 10V, R
GEN
= R
GS
= 50
I
S
= 25A, V
GS
= 0V
Channel to case
I
S
= 25A, dis/dt = –50A/
μ
s
PERFORMANCE CURVES
0
10
20
30
40
50
0
200
50
100
150
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
P
D
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
D
D
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
10
0
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
0
3 5 7
2
10
1
3 5 7
2
10
2
3 5 7
2
3
2 3
T
C
= 25°C
Single Pulse
tw = 10
m
s
100
m
s
10ms
1ms
DC
0
20
40
60
80
100
0
1.0
2.0
3.0
4.0
5.0
P
D
= 35W
V
GS
= 10V
T
C
= 25°C
Pulse Test
4V
5V
3V
2V
0
10
20
30
40
50
0
0.4
0.8
1.2
1.6
2.0
3V
6V
5V
4V
2V
V
GS
= 10V
P
D
= 35W
T
C
= 25°C
Pulse Test
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FS50ASJ-03F | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:High-Speed Switching Use Nch Power MOS FET |
| FS50ASJ-03F-T13 | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:High-Speed Switching Use Nch Power MOS FET |
| FS50KM03 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 50A I(D) | SOT-186 |
| FS50KM06 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 50A I(D) | SOT-186 |
| FS50KM-06 | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:High-Speed Switching Use Nch Power MOS FET |
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