
Jan. 2000
MITSUBISHI Nch POWER MOSFET
FS3KMA-5A
HIGH-SPEED SWITCHING USE
PRELIMINARY
Some parametric limits are subject to change.
ELECTRICAL CHARACTERISTICS 
(Tch = 25
°
C)
PERFORMANCE CURVES
V 
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
V
μ
A
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
°
C/W
250
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.0
1.5
2.25
2.5
300
35
8
15
10
45
20
1.5
—
—
±
0.1
1
4.0
2.0
3.0
—
—
—
—
—
—
—
—
2.0
5.0
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
I
D
 = 1mA, V
GS
 = 0V
V
GS
 = 
±
20V, V
DS
 = 0V
V
DS
 = 250V, V
GS
 = 0V
I
D
 = 1mA, V
DS
 = 10V
I
D
 = 1.5A, V
GS
 = 10V
I
D
 = 1.5A, V
GS
 = 10V
I
D
 = 1.5A, V
DS
 = 10V
V
DS
 = 25V, V
GS
 = 0V, f = 1MHz
V
DD
 = 150V, I
D
 = 1.5A, V
GS
 = 10V, R
GEN
 = R
GS
 = 50
I
S
 = 1.5A, V
GS
 = 0V
Channel to case
0
10
20
30
40
50
0
200
50
100
150
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE   T
C
 (
°
C)
P
D
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE   V
DS
 (V)
D
D
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE   V
DS
 (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE   V
DS
 (V)
10
–1
7
10
0
5
3
7
2
10
1
5
3
7
2
5
3
7
2
10
1
3
5 7
2
10
2
3
5 7
2
3
5
2
T
C
 = 25
°
C
Single Pulse
100
μ
s
tw =
10
μ
s
1ms
10ms
DC
0
1
2
3
4
5
0
4
8
12
16
20
V
GS
 = 20V
P
D
 = 25W
T
C
 = 25
°
C
Pulse Test
10V
4V
5V
6V
8V
0
0.4
0.8
1.2
1.6
2.0
0
2
4
6
8
10
V
GS
 = 20V
10V
T
C
 = 25
°
C
Pulse Test
5V
6V
8V
4V