參數(shù)資料
型號(hào): FS2540-9ERD0TB1
廠商: POWER-ONE INC
元件分類(lèi): 電源模塊
英文描述: 2-OUTPUT DC-DC REG PWR SUPPLY MODULE
封裝: METAL, CASE S02, MODULE
文件頁(yè)數(shù): 20/33頁(yè)
文件大?。?/td> 438K
代理商: FS2540-9ERD0TB1
S Series Data Sheet
100 Watt AC-DC and DC-DC Converters
APR 26, 2006 revised to SEP 25, 2006
Page 27 of 33
www.power-one.com
NPN output (D5 - DD):
Pin 20 (D) is internally connected via the collector-emitter
path of an NPN transistor to Vo1+ or Vo+. VD < 0.4 V
(logic low) corresponds to a monitored voltage level (Vi
and/or Vo1) > Vt +Vh. The current ID through pin 20
should not exceed 20 mA. This output is not protected
against external overvoltages. VD should not exceed 40 V.
Vi, Vo1 status
D output,
VD
Vi or Vo1 < Vt
high, H,
ID ≤ 25 A at VD = 40 V
Vi and Vo1 > Vt + Vh
low, L,
VD ≤ 0.4 V at ID = 20 mA
JFET output (D0 - D4):
Pin 20 (D) is internally connected via the drain-source path
of a JFET (self-conducting type) to Vo1+ or Vo+.
VD ≤ 0.4 V (logic low) corresponds to a monitored voltage
level (Vi and/or Vo1) < Vt. The current ID through the JFET
should not exceed 2.5 mA. The JFET is protected by a
0.5 W Zener diode of 8.2 V against external overvoltages.
Vi, Vo1 status
D output,
VD
Vi or Vo1 < Vt
low, L,
VD ≤ 0.4 V at ID = 2.5 mA
Vi and Vo1 > Vt + Vh
high, H,
ID ≤ 25 A at VD = 5.25 V
Fig. 31
Option D1 - D0: JFET output, ID ≤ 2.5 mA
Table 21: D-output logic signals
Version of D
Vi << Vt resp. Vo << Vt
Vi >> Vt + Vh resp. Vo >> Vt
Configuration
D1, D2, D3, D4, D0
low
high
JFET
D5, D6, D7, D8, D9, DD
high
low
NPN
Vo1+
Vo1–
D
VD
ID
Rp
Input
11007
Vo1+
Vo1–
D
VD
ID
Rp
Input
11006
Fig. 32
Option D5 - DD: NPN output, Vo1 ≤ 40 V, ID ≤ 20 mA
Threshold tolerances and hysteresis:
If Vi is monitored, the internal input voltage after the input
filter is measured. Consequently, this voltage differs from
the voltage at the connector pins by the voltage drop
ΔVti
across the input filter. The threshold levels of the D0 and
D9 options are factory-adjusted at nominal output current
Io nom and at TA = 25 °C. The value of ΔVti depends upon
the input voltage range (CS, DS, ..), threshold level Vt,
temperature and input current. The input current is a
function of the input voltage and the output power.
Fig. 33
Definition of Vti, ΔVt i and ΔVhi (JFET output)
ΔV
ti
Vhi
VD low
VD
VD high
Vi
P
o
=
P
o
nom
P
o
=
0
P
o
=
0
Vti
P
o
=
P
o
nom
11021
相關(guān)PDF資料
PDF描述
FS2540-9ERD6TB1 2-OUTPUT DC-DC REG PWR SUPPLY MODULE
FS2540-9RD3 2-OUTPUT DC-DC REG PWR SUPPLY MODULE
FS2660-7RD4 2-OUTPUT DC-DC REG PWR SUPPLY MODULE
FS2660-7RD9TB1 2-OUTPUT DC-DC REG PWR SUPPLY MODULE
FS2660-9EPD9TB1 2-OUTPUT DC-DC REG PWR SUPPLY MODULE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FS25R06KF 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 25A I(C)
FS25R06KF2 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 25A I(C)
FS25R10KF2 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 25A I(C)
FS25R12KE3G 功能描述:IGBT 模塊 N-CH 1.2KV 40A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FS25R12KF 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 25A I(C)