參數(shù)資料
型號: FS1210BH
英文描述: Standard Gate SCRs
中文描述: 標準門可控硅
文件頁數(shù): 3/4頁
文件大?。?/td> 130K
代理商: FS1210BH
Dec - 02
FS12...H
STANDARD SCR
1.0
K = [Zth(j-c) / Rth (j-c)]
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
1E-3
1E-2
1E-1
1E+0
tp (s)
0.5
0.2
0.1
IT(av)(A)
Fig. 1: Maximum average power dissipation
versus average on-state current.
0
25
50
75
100
125
Fig. 2: Average and D.C. on-state current
versus case temperature.
P (W)
Tc (oC)
IT(av)(A)
0
2
4
6
8
0
2
4
6
8
10
12
14
16
0
2
1
4
3
6
5
8
7
10
9
12
11
14
13
1
3
5
7
9
10
IGT, IH (Tj) / IGT, IH (Tj = 25 oC)
Fig. 4: Relative variation of gate trigger
current and holding current versus junction
temperature.
Tj (oC)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20
20
60
80 100
0
40
120 140
IGT
IH
1
10
100
1000
Fig. 5: Non repetitive surge peak on-state
current versus number of cycles.
160
140
120
100
80
60
40
20
0
I TSM (A)
Number of cycles
Tj initial = 25 oC
1000
ITSM(A). I
2
t (A
2
s)
Fig. 7: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp < 10 ms, and corresponding value of I
2
t.
tp(ms)
100
10
ITSM
I
2
t
Tj initial = 25 oC
1
10
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