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參數(shù)資料
| 型號： | FS0609MH |
| 英文描述： | Standard Gate SCRs |
| 中文描述： | 標(biāo)準(zhǔn)門可控硅 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 136K |
| 代理商： | FS0609MH |
Dec - 02
Fig. 1: Maximum average power dissipation
versus average on-state current.
FS0609.H
STANDARD SCR
0
2
10
8
6
4
2
0
4
6
P (W)
IT(av)(A)
1
3
5
7
1.0
K = [Zth(j-c) / Rth (j-c)]
Fig. 5: Relative variation of thermal impedance
junction to case versus pulse duration.
1E-3
1E-2
1E-1
1E+0
tp (s)
0.5
0.2
0.1
α
360 o
P (W)
Fig. 2: Correlation between maximum average power
dissipation and maximum allowable temperatures
(Tamb and Tcase) for different thermal resistances
heatsink + contact.
T case (oC)
-110
-115
-120
-125
Tamb (oC)
125
10
8
6
4
2
0
0
25
50
75
100
Fig. 3: Average and D.C. on-state current
versus case temperature.
I T(av) (A)
T case (oC)
10
8
6
4
2
0
Fig. 4: Average and D.C. on-state current
versus ambient temperature (device mounted
on FR4 with recommended pad layout).
I T(av) (A)
Tamb (oC)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
α
= 90 o
α
= 60 o
α
= 180 o
D.C.
α
= 120 o
α
= 30 o
α
= 180 o
Rth=0 oC/W
Rth=5 oC/W
Rth=10 oC/W
Rth=37 oC/W
Rth=15 oC/W
0
25
50
75
100
125
α
= 180 o
D.C.
0
25
50
75
100
125
D.C.
α
= 180 o
IGT, IH (Tj) / IGT, IH (Tj = 25 oC)
Fig. 6: Relative variation of gate trigger
current and holding current versus junction
temperature.
Tj (oC)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20
20
60
80 100
0
40
120 140
IGT
IH
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