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參數(shù)資料
| 型號： | FRS234H |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 5A, 250V, 0.715 Ohm, Rad Hard, N-Channel Power MOSFETs |
| 中文描述： | 0.715 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
| 封裝： | HERMETIC SEALED, METAL, TO-257AA, 3 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 49K |
| 代理商： | FRS234H |
4-3
Post-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TYPE
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source
Breakdown Volts
(Note 4, 6)
BVDSS
FRS234D, R
VGS = 0, ID = 1mA
250
-
V
(Note 5, 6)
BVDSS
FRS234H
VGS = 0, ID = 1mA
238
-
V
Gate-Source
Threshold Volts
(Note 4, 6)
VGS(th)
FRS234D, R
VGS = VDS, ID = 1mA
2.0
4.0
V
(Note 3, 5, 6)
VGS(th)
FRS234H
VGS = VDS, ID = 1mA
1.5
4.5
V
Gate-Body
Leakage Forward
(Note 4, 6)
IGSSF
FRS234D, R
VGS = 20V, VDS = 0
-
100
nA
(Note 5, 6)
IGSSF
FRS234H
VGS = 20V, VDS = 0
-
200
nA
Gate-Body
Leakage Reverse
(Note 2, 4, 6)
IGSSR
FRS234D, R
VGS = -20V, VDS = 0
-
100
nA
(Note 2, 5, 6)
IGSSR
FRS234H
VGS = -20V, VDS = 0
-
200
nA
Zero-Gate Voltage
Drain Current
(Note 4, 6)
IDSS
FRS234D, R
VGS = 0, VDS = 200V
-
25
μ
A
(Note 5, 6)
IDSS
FRS234H
VGS = 0, VDS = 200V
-
100
μ
A
Drain-Source
On-State Volts
(Note 1, 4, 6)
VDS(on)
FRS234D, R
VGS = 10V, ID = 5A
-
3.75
V
(Note 1, 5, 6)
VDS(on)
FRS234H
VGS = 16V, ID = 5A
-
5.63
V
Drain-Source
On Resistance
(Note 1, 4, 6)
RDS(on)
FRS234D, R
VGS = 10V, ID = 3A
-
0.715
(Note 1, 5, 6)
RDS(on)
FRS234H
VGS = 14V, ID = 3A
-
1.073
NOTES:
1. Pulse test, 300
μ
s max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 1E13
5. Gamma = 1000KRAD(Si). Neutron = 1E13
6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 1/19/90 on TA 17633 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, Intersil Application note AN-8831, Oct. 1988
FRS234D, FRS234R, FRS234H
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| FRS234D | 5A, 250V, 0.715 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRS234R | CAP 22PF 50V 5% NPO(C0G) SMD-0603 TR-7-PA |
| FRS240D | 12A, 200V, 0.255 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRS240H | 12A, 200V, 0.255 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRS240R | 12A, 200V, 0.255 Ohm, Rad Hard, N-Channel Power MOSFETs |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FRS234R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5A, 250V, 0.715 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRS234R4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 5A I(D) | TO-257AA |
| FRS2405 | 制造商:Power-One 功能描述: |
| FRS2405C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| FRS2405I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
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