參數(shù)資料
型號(hào)： FRM450D
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： 10 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
文件頁(yè)數(shù)： 2/8頁(yè)
文件大小： 86K
代理商： FRM450D
2001 Fairchild Semiconductor Corporation
FRM450D, FRM450R, FRM450H Rev. A
Pre-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source Breakdown Volts
BVDSS
VGS = 0, ID = 1mA
500
-
V
Gate-Threshold Volts
VGS(th)
VDS = VGS, ID = 1mA
2.0
4.0
V
Gate-Body Leakage Forward
IGSSF
VGS = +20V
-
100
nA
Gate-Body Leakage Reverse
IGSSR
VGS = -20V
-
100
nA
Zero-Gate Voltage
Drain Current
IDSS1
IDSS2
IDSS3
VDS = 500V, VGS = 0
VDS = 400V, VGS = 0
VDS = 400V, VGS = 0, TC = +125
o
C
-
-
-
1
0.025
0.25
mA
Rated Avalanche Current
IAR
Time = 20
μ
s
-
30
A
Drain-Source On-State Volts
VDS(on)
VGS = 10V, ID = 10A
-
6.30
V
Drain-Source On Resistance
RDS(on)
VGS = 10V, ID = 6A
-
0.600
Turn-On Delay Time
td(on)
VDD = 250V, ID = 10A
-
160
ns
Rise Time
tr
Pulse Width = 3
μ
s
-
260
Turn-Off Delay Time
td(off)
Period = 300
μ
s, Rg = 25
-
750
Fall Time
tf
0
≤
VGS
≤
10 (See Test Circuit)
-
180
Gate-Charge Threshold
QG(th)
VDD =250V, ID = 10A
IGS1 = IGS2
0
≤
VGS
≤
20
4
18
nc
Gate-Charge On State
QG(on)
64
258
Gate-Charge Total
QGM
125
502
Plateau Voltage
VGP
3
14
V
Gate-Charge Source
QGS
8
34
nc
Gate-Charge Drain
QGD
30
123
Diode Forward Voltage
VSD
ID = 10A, VGD = 0
0.6
1.8
V
Reverse Recovery Time
TT
I = 10A; di/dt = 100A/
μ
s
-
3000
ns
Junction-To-Case
R
θ
jc
-
0.83
o
C/W
Junction-To-Ambient
R
θ
ja
Free Air Operation
-
30
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
V
DS
DUT
R
GS
0V
V
GS
= 12V
V
DD
R
L
t
P
V
GS
≤
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
50
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
FRM450D, FRM450R, FRM450H
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FRM450H 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs
FRM450R 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs
FR-M50-AC480V-28 制造商:Panasonic Electric Works 功能描述:
FRM-50GR-52-100R 功能描述:RES FUSE METAL 100 OHM 1/2W 2% RoHS:是 類(lèi)別:電阻器 >> 通孔電阻器 系列:FRM 產(chǎn)品變化通告:Global Part Number Change 9/Aug/2010 標(biāo)準(zhǔn)包裝:5,000 系列:RN 電阻（歐姆）:2.4k 功率（瓦特）:0.25W，1/4W 復(fù)合體:金屬薄膜 特點(diǎn):阻燃涂層 溫度系數(shù):±50ppm/°C 容差:±0.5% 封裝/外殼:軸向 尺寸/尺寸:0.093" 直徑 x 0.250" L（2.35mm x 6.35mm） 高度:- 端子數(shù):2 包裝:帶卷 (TR) 其它名稱(chēng):RN 1/4 T2 2.4K 0.5% RRN1/4T22.4K0.5%RRN1/4T22.4K0.5%R-NDRN1/4T22.4KDRRN1/4T22.4KDR-ND
FRM-50GR-52-10R 功能描述:RES FUSE METAL 10 OHM 1/2W 2% RoHS:是 類(lèi)別:電阻器 >> 通孔電阻器 系列:FRM 產(chǎn)品變化通告:Global Part Number Change 9/Aug/2010 標(biāo)準(zhǔn)包裝:5,000 系列:RN 電阻（歐姆）:2.4k 功率（瓦特）:0.25W，1/4W 復(fù)合體:金屬薄膜 特點(diǎn):阻燃涂層 溫度系數(shù):±50ppm/°C 容差:±0.5% 封裝/外殼:軸向 尺寸/尺寸:0.093" 直徑 x 0.250" L（2.35mm x 6.35mm） 高度:- 端子數(shù):2 包裝:帶卷 (TR) 其它名稱(chēng):RN 1/4 T2 2.4K 0.5% RRN1/4T22.4K0.5%RRN1/4T22.4K0.5%R-NDRN1/4T22.4KDRRN1/4T22.4KDR-ND
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