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參數(shù)資料
| 型號(hào)： | FRM244H |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 12 A, 250 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 330K |
| 代理商： | FRM244H |
2001 Fairchild Semiconductor Corporation
FRM244D, FRM244R, FRM244H Rev. A
FRM244D, FRM244R,
FRM244H
12A, 250V, 0.400 Ohm, Rad Hard,
N-Channel Power MOSFETs
Package
TO-204AA
Symbol
Features
12A, 250V, RDS(on) = 0.400
Second Generation Rad Hard MOSFET Results From New Design Concepts
Gamma
- Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
- Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
Photo Current - 7.0nA Per-RAD(Si)/sec Typically
Neutron
- Pre-RAD Specifications for 1E13 Neutrons/cm
- Usable to 1E14 Neutrons/cm
Gamma Dot
2
2
Description
The Intersil Corporation has designed a series of SECOND GENERATION hard-
ened power MOSFETs of both N and P channel enhancement types with ratings
from 100V to 500V, 1A to 60A, and on resistance as low as 25m
ness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness rang-
ing from 1E13n/cm
for 500V product to 1E14n/cm
hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12
with current limiting.
. Total dose hard-
2
2
for 100V product. Dose rate
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
o
)
This part may be supplied as a die or in various packages other than shown above.
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired
deviations from the data sheet.
Absolute Maximum Ratings
(TC = +25
o
C) Unless Otherwise Specified
FRM244D, R, H
250
250
UNITS
V
V
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain-Gate Voltage (RGS = 20k
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current
TC = +25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = +100
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation
TC = +25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = +100
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inductive Current, Clamped, L = 100
μ
H, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
o
o
12
7
36
±
20
A
A
A
V
o
o
o
125
50
1.00
36
12
36
W
W
W/
o
C
A
A
A
o
-55 to +150
C
300
o
C
June 1998
Title
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ter-
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FRM244R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 250V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs |
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| FRM-25GR-52-100R | 功能描述:RES FUSE METAL 100 OHM 1/4W 2% RoHS:是 類(lèi)別:電阻器 >> 通孔電阻器 系列:FRM 產(chǎn)品變化通告:Global Part Number Change 9/Aug/2010 標(biāo)準(zhǔn)包裝:2,500 系列:RSF 電阻（歐姆）:15 功率（瓦特）:0.5W，1/2W 復(fù)合體:金屬氧化物薄膜 特點(diǎn):耐燃 溫度系數(shù):±200ppm/°C 容差:±5% 封裝/外殼:軸向 尺寸/尺寸:0.138" 直徑 x 0.354" L（3.50mm x 9.00mm） 高度:- 端子數(shù):2 包裝:帶卷 (TR) 其它名稱:RS 1/2 15 5% RRS 1/2 15 5% R-NDRS1/2155%RRS1/2155%R-NDRS1/215JRRS1/215JR-ND |
| FRM-25GR-52-10R | 功能描述:RES FUSE METAL 10 OHM 1/4W 2% RoHS:是 類(lèi)別:電阻器 >> 通孔電阻器 系列:FRM 產(chǎn)品變化通告:Global Part Number Change 9/Aug/2010 標(biāo)準(zhǔn)包裝:2,500 系列:RSF 電阻（歐姆）:15 功率（瓦特）:0.5W，1/2W 復(fù)合體:金屬氧化物薄膜 特點(diǎn):耐燃 溫度系數(shù):±200ppm/°C 容差:±5% 封裝/外殼:軸向 尺寸/尺寸:0.138" 直徑 x 0.354" L（3.50mm x 9.00mm） 高度:- 端子數(shù):2 包裝:帶卷 (TR) 其它名稱:RS 1/2 15 5% RRS 1/2 15 5% R-NDRS1/2155%RRS1/2155%R-NDRS1/215JRRS1/215JR-ND |
| FRM-25GR-52-120R | 功能描述:RES FUSE METAL 120 OHM 1/4W 2% RoHS:是 類(lèi)別:電阻器 >> 通孔電阻器 系列:FRM 產(chǎn)品變化通告:Global Part Number Change 9/Aug/2010 標(biāo)準(zhǔn)包裝:2,500 系列:RSF 電阻（歐姆）:15 功率（瓦特）:0.5W，1/2W 復(fù)合體:金屬氧化物薄膜 特點(diǎn):耐燃 溫度系數(shù):±200ppm/°C 容差:±5% 封裝/外殼:軸向 尺寸/尺寸:0.138" 直徑 x 0.354" L（3.50mm x 9.00mm） 高度:- 端子數(shù):2 包裝:帶卷 (TR) 其它名稱:RS 1/2 15 5% RRS 1/2 15 5% R-NDRS1/2155%RRS1/2155%R-NDRS1/215JRRS1/215JR-ND |
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