- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄375900 > FRM140D (INTERSIL CORP) 23A, 100V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs PDF資料下載
參數(shù)資料
| 型號(hào)： | FRM140D |
| 廠(chǎng)商： | INTERSIL CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 23A, 100V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs |
| 中文描述： | 23 A, 100 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | FRM140D |
4-2
Pre-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source Breakdown Volts
BVDSS
VGS = 0, ID = 1mA
100
-
V
Gate-Threshold Volts
VGS(th)
VDS = VGS, ID = 1mA
2.0
4.0
V
Gate-Body Leakage Forward
IGSSF
VGS = +20V
-
100
nA
Gate-Body Leakage Reverse
IGSSR
VGS = -20V
-
100
nA
Zero-Gate Voltage
Drain Current
IDSS1
IDSS2
IDSS3
VDS = 100V, VGS = 0
VDS = 80V, VGS = 0
VDS = 80V, VGS = 0, TC = +125
o
C
-
-
-
1
0.025
0.25
mA
Rated Avalanche Current
IAR
Time = 20
μ
s
-
69
A
Drain-Source On-State Volts
VDS(on)
VGS = 10V, ID = 23A
-
3.14
V
Drain-Source On Resistance
RDS(on)
VGS = 10V, ID = 15A
-
0.13
Turn-On Delay Time
td(on)
VDD = 50V, ID = 23A
-
50
ns
Rise Time
tr
Pulse Width = 3
μ
s
-
500
Turn-Off Delay Time
td(off)
Period = 300
μ
s, Rg = 25
-
160
Fall Time
tf
0
≤
VGS
≤
10 (See Test Circuit)
-
200
Gate-Charge Threshold
QG(th)
VDD = 50V, ID = 23A
IGS1 = IGS2
0
≤
VGS
≤
20
2
8
nc
Gate-Charge On State
QG(on)
30
122
Gate-Charge Total
QGM
57
228
Plateau Voltage
VGP
3
12
V
Gate-Charge Source
QGS
6
24
nc
Gate-Charge Drain
QGD
13
54
Diode Forward Voltage
VSD
ID = 23A, VGD = 0
0.6
1.8
V
Reverse Recovery Time
TT
I = 23A; di/dt = 100A/
μ
s
-
600
ns
Junction-To-Case
R
θ
jc
-
1.0
o
C/W
Junction-To-Ambient
R
θ
ja
Free Air Operation
-
30
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
V
DS
DUT
R
GS
0V
V
GS
= 12V
V
DD
R
L
t
P
V
GS
≤
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
50
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
FRM140D, FRM140R, FRM140H
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FRM140H | 23A, 100V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRM140R | 23A, 100V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRM230H | 8A, 200V, 0.50 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRM230D | 8A, 200V, 0.50 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRM230R | 8A, 200V, 0.50 Ohm, Rad Hard, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FRM140H | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:23A, 100V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRM140R | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:23A, 100V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRM15R621CU | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:Optoelectronic |
| FRM15W231CR | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:AMPLIFIER OUTPUT PHOTO IC |
| FR-M160-AC120V-105 | 制造商:Panasonic Electric Works 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。