參數(shù)資料
型號(hào)： FRL9230D
廠商： HARRIS SEMICONDUCTOR
元件分類(lèi)： JFETs
英文描述： 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs
中文描述： 1.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
封裝： HERMETIC SEALED, METAL CAN, TO-205AF, 3 PIN
文件頁(yè)數(shù)： 2/6頁(yè)
文件大小： 47K
代理商： FRL9230D
4-2
Pre-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source Breakdown Volts
BVDSS
VGS = 0, ID = 1mA
-200
-
V
Gate-Threshold Volts
VGS(th)
VDS = VGS, ID = 1mA
-2.0
-4.0
V
Gate-Body Leakage Forward
IGSSF
VGS = -20V
-
100
nA
Gate-Body Leakage Reverse
IGSSR
VGS = +20V
-
100
nA
Zero-Gate Voltage
Drain Current
IDSS1
IDSS2
IDSS3
VDS = -200V, VGS = 0
VDS = -160V, VGS = 0
VDS = -160V, VGS = 0, TC = +125
o
C
-
-
-
1
0.025
0.25
mA
Rated Avalanche Current
IAR
Time = 20
μ
s
-
9
A
Drain-Source On-State Volts
VDS(on)
VGS = -10V, ID = 3A
-
-4.1
V
Drain-Source On Resistance
RDS(on)
VGS = -10V, ID = 2A
-
1.3
Turn-On Delay Time
td(on)
VDD = -100V, ID = 3A
-
58
ns
Rise Time
tr
Pulse Width = 3
μ
s
-
120
Turn-Off Delay Time
td(off)
Period = 300
μ
s, Rg = 25
-
150
Fall Time
tf
0
≤
VGS
≤
10 (See Test Circuit)
-
70
Gate-Charge Threshold
QG(th)
VDD = -100V, ID = 3A
IGS1 = IGS2
0
≤
VGS
≤
20
1
4
nc
Gate-Charge On State
QG(on)
13
52
Gate-Charge Total
QGM
28
114
Plateau Voltage
VGP
-3
-12
V
Gate-Charge Source
QGS
4
16
nc
Gate-Charge Drain
QGD
4
16
Diode Forward Voltage
VSD
ID = 3A, VGD = 0
-0.6
-1.8
V
Reverse Recovery Time
TT
I = 3A; di/dt = 100A/
μ
s
-
400
ns
Junction-To-Case
R
θ
jc
-
5.0
o
C/W
Junction-To-Ambient
R
θ
ja
Free Air Operation
-
175
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
V
DD
R
L
V
DS
DUT
R
GS
0V
V
GS
= -12V
t
P
V
GS
≤
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
50
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
FRL9230D, FRL9230R, FRL9230H
相關(guān)PDF資料
PDF描述
FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs
FRL9230R 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs
FRM130D 14A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs
FRM130H 14A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs
FRM130R 14A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FRL9230H 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs
FRL9230R 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs
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FRLPR64BL 功能描述:電線導(dǎo)管 Fitting, Low Profile Reducer from 6" x 4 RoHS:否 制造商:Panduit 類(lèi)型:Slotted SideWall Open finger design wiring cut 材料:Polypropylene 顏色:Light Gray 大小: 最大光束直徑: 抗拉強(qiáng)度: 外部導(dǎo)管寬度:25 mm 外部導(dǎo)管高度:25 mm
FRL-SMA-142DB 功能描述:RF 連接器 RoHS:否 制造商:Bomar Interconnect 產(chǎn)品:Connectors 射頻系列:BNC 型式:Jack (Female) 極性: 觸點(diǎn)電鍍:Gold 阻抗: 端接類(lèi)型:Solder 主體類(lèi)型:Straight Bulkhead 電纜類(lèi)型:
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