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參數(shù)資料
| 型號： | FRF9150H |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs |
| 中文描述： | 23 A, 100 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 49K |
| 代理商： | FRF9150H |
4-2
Pre-Radiation Electrical Specications TC = +25oC, Unless Otherwise Specied
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source Breakdown Volts
BVDSS
VGS = 0, ID = 1mA
-100
-
V
Gate-Threshold Volts
VGS(TH)
VDS = VGS, ID = 1mA
-2.0
-4.0
V
Gate-Body Leakage Forward
IGSSF
VGS = -20V
-
100
nA
Gate-Body Leakage Reverse
IGSSR
VGS = +20V
-
100
nA
Zero-Gate Voltage
Drain Current
IDSS1
IDSS2
IDSS3
VDS = -100V, VGS = 0
VDS = -80V, VGS = 0
VDS = -80V, VGS = 0, TC = +125
oC
-
1
0.025
0.25
mA
Rated Avalanche Current
IAR
Time = 20
s
-
69
A
Drain-Source On-State Volts
VDS(ON)
VGS = -10V, ID = 23A
-
-3.38
V
Drain-Source On Resistance
rDS(ON)
VGS = -10V, ID = 15A
-
0.140
Turn-On Delay Time
tD(ON)
VDD = -50V, ID = 23A
-
170
ns
Rise Time
tR
Pulse Width = 3
s
-
620
Turn-Off Delay Time
tD(OFF)
Period = 300
s, RG = 25
-
600
Fall Time
tF
0
≤ VGS ≤ 10 (See Test Circuit)
-
242
Gate-Charge Threshold
QG(TH)
VDD = -50V, ID = 23A
IGS1 = IGS2
0
≤ VGS ≤ 20
416
nc
Gate-Charge On State
QG(ON)
60
240
Gate-Charge Total
QGM
126
504
Plateau Voltage
VGP
314
V
Gate-Charge Source
QGS
17
68
nc
Gate-Charge Drain
QGD
21
86
Diode Forward Voltage
VSD
ID = 23A, VGD = 0
-0.6
-1.8
V
Reverse Recovery Time
tT
I = 23A; di/dt = 100A/
s
-
700
ns
Junction-To-Case
RθJC
-
1.0
oC/W
Junction-To-Ambient
RθJA
Free Air Operation
-
48
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
VDD
RL
VDS
DUT
RGS
0V
VGS
tP
VGS ≤ 20V
L
+
-
VDS
VDD
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
50
50
50V-150V
IAS
+
-
ELECTRONIC SWITCH OPENS
WHEN IAS IS REACHED
CURRENT
TRANSFORMER
FRF9150D, FRF9150R, FRF9150H
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FRF9150R | 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRF9250H | 14A, -200V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRF9250R | 14A, -200V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRJA-442 | 2 CONTACT(S), FEMALE, RIGHT ANGLE TELECOM AND DATACOM CONNECTOR, SOLDER, JACK |
| FRJA-444 | 4 CONTACT(S), FEMALE, RIGHT ANGLE TELECOM AND DATACOM CONNECTOR, SOLDER, JACK |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FRF9150R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRF9150R3 | 制造商:Harris Corporation 功能描述: |
| FRF9150R4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 23A I(D) | TO-254AA |
| FRF9250D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:14A, -200V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRF9250H | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:14A, -200V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs |
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