- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375899 > FRF250D (INTERSIL CORP) 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFETs PDF資料下載
參數(shù)資料
| 型號： | FRF250D |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFETs |
| 中文描述： | 23 A, 200 V, 0.115 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 49K |
| 代理商： | FRF250D |
4-3
Post-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TYPE
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source
Breakdown Volts
(Note 4, 6)
BVDSS
FRF250D, R
VGS = 0, ID = 1mA
200
-
V
(Note 5, 6)
BVDSS
FRF250H
VGS = 0, ID = 1mA
190
-
V
Gate-Source
Threshold Volts
(Note 4, 6)
VGS(th)
FRF250D, R
VGS = VDS, ID = 1mA
2.0
4.0
V
(Note 3, 5, 6)
VGS(th)
FRF250H
VGS = VDS, ID = 1mA
1.5
4.5
V
Gate-Body
Leakage Forward
(Note 4, 6)
IGSSF
FRF250D, R
VGS = 20V, VDS = 0
-
100
nA
(Note 5, 6)
IGSSF
FRF250H
VGS = 20V, VDS = 0
-
200
nA
Gate-Body
Leakage Reverse
(Note 2, 4, 6)
IGSSR
FRF250D, R
VGS = -20V, VDS = 0
-
100
nA
(Note 2, 5, 6)
IGSSR
FRF250H
VGS = -20V, VDS = 0
-
200
nA
Zero-Gate Voltage
Drain Current
(Note 4, 6)
IDSS
FRF250D, R
VGS = 0, VDS = 160V
-
25
μ
A
(Note 5, 6)
IDSS
FRF250H
VGS = 0, VDS = 160V
-
100
μ
A
Drain-Source
On-State Volts
(Note 1, 4, 6)
VDS(on)
FRF250D, R
VGS = 10V, ID = 23A
-
2.78
V
(Note 1, 5, 6)
VDS(on)
FRF250H
VGS = 16V, ID = 23A
-
3.89
V
Drain-Source
On Resistance
(Note 1, 4, 6)
RDS(on)
FRF250D, R
VGS = 10V, ID = 15A
-
0.115
(Note 1, 5, 6)
RDS(on)
FRF250H
VGS = 14V, ID = 15A
-
0.161
NOTES:
1. Pulse test, 300
μ
s max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 1E13
5. Gamma = 1000KRAD(Si). Neutron = 1E13
6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 11/15/89 on TA 17652 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, Intersil Application note AN-8831, Oct. 1988
FRF250D, FRF250R, FRF250H
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FRF250H | 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRF250R | 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRF254D | 17A, 250V, 0.185 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRF254H | 17A, 250V, 0.185 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRF254R | 17A, 250V, 0.185 Ohm, Rad Hard, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FRF250H | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRF250R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRF254D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:17A, 250V, 0.185 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRF254H | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:17A, 250V, 0.185 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRF254R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:17A, 250V, 0.185 Ohm, Rad Hard, N-Channel Power MOSFETs |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。