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參數(shù)資料
| 型號： | FQY45N50F |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 45A I(D) | TO-247VAR |
| 中文描述： | 晶體管| MOSFET的| N溝道| 500V五（巴西）直| 45A條（?。﹟對247VAR |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 621K |
| 代理商： | FQY45N50F |
2001 Fairchild Semiconductor Corporation
May 2001
Rev. A, May 2001
F
F R F E T
TM
FQY45N50F
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
where the body diode is used such as phase-shifted ZVS,
basic full-bridge topology.
Features
45A, 500V, R
DS(on)
= 0.1
@V
GS
= 10 V
Low gate charge ( typical 180 nC)
Low Crss ( typical 100 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Fast recovery body diode ( max, 250ns )
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQY45N50F
500
45
28.5
180
±
30
1900
45
50
4.5
500
4.0
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
Typ
--
0.24
--
Max
0.25
--
40
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
! "
!
!
S
!
"
"
D
G
Power247
FQY Series
G
S
D
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