參數(shù)資料
型號： FQU7P06
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 60V P-Channel MOSFET(漏源電壓為-60V、漏電流為-5.4A的P溝道增強型MOS場效應管)
中文描述： 5.4 A, 60 V, 0.451 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
封裝： IPAK-3
文件頁數(shù)： 1/9頁
文件大?。?/td> 645K
代理商： FQU7P06
2000 Fairchild Semiconductor International
September 2000
Rev. A, September 2000
F
QFET
TM
FQD7P06 / FQU7P06
60V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
-5.4A, -60V, R
DS(on)
= 0.45
@V
GS
= -10 V
Low gate charge ( typical 6.3 nC)
Low Crss ( typical 25 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQD7P06 / FQU7P06
-60
-5.4
-3.42
-21.6
±
25
90
-5.4
2.8
-7.0
2.5
28
0.22
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
Parameter
Typ
--
--
--
Max
4.5
50
110
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
I-PAK
FQU Series
D-PAK
FQD Series
G
S
D
G
S
D
●
●
●
●
▲
!
!
D
!
!
!
●
●
S
G
相關PDF資料
PDF描述
FQD7P20 200V P-Channel MOSFET
FQU7P20 200V P-Channel MOSFET(漏源電壓為-200V、漏電流為-5.7A的P溝道增強型MOS場效應管)
FQD8P10 100V P-Channel MOSFET
FQD9N08 80V N-Channel MOSFET
FQD9N08L 80V LOGIC N-Channel MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
FQU7P06TU 功能描述:MOSFET 60V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQU7P06TU_NB82048 功能描述:MOSFET 60V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQU7P06TUNB82048 制造商:Fairchild Semiconductor Corporation 功能描述:Trans MOSFET P-CH 60V 5.4A 3-Pin(3+Tab) IPAK Rail
FQU7P20 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V P-Channel MOSFET
FQU7P20TU 功能描述:MOSFET 200V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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