參數(shù)資料
型號(hào)： FQPF7P20
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： 200V P-Channel MOSFET
中文描述： 5.2 A, 200 V, 0.69 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： TO-220F, 3 PIN
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 547K
代理商： FQPF7P20
2000 Fairchild Semiconductor International
December 2000
Rev. A4, December 2000
F
QFET
TM
FQPF7N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state
resistance,
provide
performance, and withstand high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as audio
amplifiers, high efficiency switching DC/DC converters, and
DC motor control.
superior
switching
Features
5.5A, 100V, R
DS(on)
= 0.35
@V
GS
= 10 V
Low gate charge ( typical 5.8 nC)
Low Crss ( typical 10 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175
°
C maximum junction temperature rating
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQPF7N10
100
5.5
3.89
22
±
25
50
5.5
2.3
6.0
23
0.15
-55 to +175
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
”
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
Parameter
Typ
--
--
Max
6.52
62.5
Units
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
! "
!
!
S
!
"
"
D
G
TO-220F
FQPF Series
G
S
D
相關(guān)PDF資料
PDF描述
FQPF7N10L 100V LOGIC N-Channel MOSFET
FQPF7P06 60V P-Channel MOSFET
FQPF7N20 200V N-Channel MOSFET
FQPF7N40 400V N-Channel MOSFET
FQPF7N20L 200V LOGIC N-Channel MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQPF85N06 功能描述:MOSFET 60V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQPF85N06 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N TO-220F
FQPF8N25 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:250V N-Channel MOSFET
FQPF8N60C 功能描述:MOSFET 600V N-Ch Q-FET advance C-Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQPF8N60CF 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:600V N-Channel MOSFET
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