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參數(shù)資料
| 型號(hào)： | FQP95N03L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V LOGIC N-Channel MOSFET |
| 中文描述： | 95 A, 30 V, 0.0115 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封裝： | TO-220, 3 PIN |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 686K |
| 代理商： | FQP95N03L |
May 2001
QF E T
TM
F
2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
FQP95N03L
30V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as DC/DC
converters,
high
efficiency
management in portable and battery operated products.
switching
for
power
Features
95A, 30V, R
DS(on)
= 0.0085
@V
GS
= 10 V
Low gate charge ( typical 36 nC)
Low Crss ( typical 240 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175
°
C maximum junction temperature rating
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQP95N03L
30
95
67.2
380
±
20
400
95
15
7.0
150
1.0
-55 to +175
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
Typ
--
0.5
--
Max
1.0
--
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
! "
!
!
S
!
"
"
D
G
G
S
D
TO-220
FQP Series
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| FQP9N08 | 功能描述:MOSFET 80V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQP9N08L | 功能描述:MOSFET 80V N-Channel QFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQP9N15 | 功能描述:MOSFET 150V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQP9N25 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQP9N25C | 功能描述:MOSFET 250V N-Channel Advance Q-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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