參數(shù)資料
型號： FQP8N90C
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 900V N-Channel MOSFET
中文描述： 6.3 A, 900 V, 1.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220, 3 PIN
文件頁數(shù)： 1/10頁
文件大小： 865K
代理商： FQP8N90C
2003 Fairchild Semiconductor Corporation
Rev. A, November 2003
F
QF E T
FQP8N90C/FQPF8N90C
900V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
6.3A, 900V, R
DS(on)
= 1.9
@V
GS
= 10 V
Low gate charge ( typical 35 nC)
Low Crss ( typical 12 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQP8N90C
FQPF8N90C
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
900
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
6.3
3.8
25
6.3 *
3.8 *
25 *
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
±
30
850
6.3
17.1
4.0
(Note 2)
(Note 1)
(Note 1)
(Note 3)
171
1.37
60
0.48
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
-55 to +150
T
L
300
°C
Symbol
R
θ
JC
R
θ
JS
R
θ
JA
Parameter
FQP8N90C
0.73
0.5
62.5
FQPF8N90C
2.08
--
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
TO-220
FQP Series
G
S
D
TO-220F
FQPF Series
G
S
D
●
●
●
●
●
●
●
▲
!
!
S
!
!
!
!
D
G
相關(guān)PDF資料
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FQPF8N90C 900V N-Channel MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQP8P10 功能描述:MOSFET 100V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQP8P10 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P TO-220 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, P, TO-220 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, P, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):410mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:65W ;RoHS Compliant: No
FQP90N08 功能描述:MOSFET 80V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQP90N10V2 功能描述:MOSFET 100V N-Channel Adv QFET V2 Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQP95N03L 功能描述:MOSFET TO-220 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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