參數(shù)資料
型號: FQP6N40CF
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 400V N-Channel MOSFET
中文描述: 6 A, 400 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220, 3 PIN
文件頁數(shù): 3/8頁
文件大?。?/td> 1063K
代理商: FQP6N40CF
3
www.fairchildsemi.com
FQP6N40CF Rev. A
F
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
10
-1
10
0
10
1
V
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
Notes :
1. 250μs Pulse Test
2. T
C
= 25
I
D
,
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
-1
10
0
10
1
150
o
C
25
o
C
-55
o
C
Notes :
1. V
= 40V
2. 250μs Pulse Test
I
D
,
V
GS
, Gate-Source Voltage [V]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
-1
10
0
10
1
150
Notes :
1. V
= 0V
2. 250μs Pulse Test
25
I
D
,
V
SD
, Source-Drain voltage [V]
0
5
10
15
20
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
R
D
D
I
D
, Drain Current [A]
10
-1
10
0
10
1
0
200
400
600
800
1000
1200
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Note ;
1. V
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0
5
10
15
20
0
2
4
6
8
10
12
V
DS
= 200V
V
DS
= 80V
V
DS
= 320V
Note : I
D
= 6A
V
G
,
Q
G
, Total Gate Charge [nC]
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