參數(shù)資料
型號： FQP32N12V2
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 120V N-Channel MOSFET
中文描述： 32 A, 120 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220, 3 PIN
文件頁數(shù)： 1/10頁
文件大?。?/td> 857K
代理商： FQP32N12V2
2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
F
QF E T
FQP32N12V2/FQPF32N12V2
120V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for DC to DC converters, sychronous rectification,
and other applications lowest Rds(on) is required.
Features
32 A, 120V, R
DS(on)
= 0.05
@V
GS
= 10 V
Low gate charge ( typical 41 nC)
Low Crss ( typical 70 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQP32N12V2
FQPF32N12V2
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
120
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
32
23
128
32 *
23 *
128 *
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
±
30
439
32
15
4.5
(Note 2)
(Note 1)
(Note 1)
(Note 3)
150
1
50
0.33
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
-55 to +175
T
L
300
°C
Symbol
R
θ
JC
R
θ
JS
R
θ
JA
Parameter
FQP32N12V2
1.0
40
62.5
FQPF32N12V2
3.0
--
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
●
●
●
●
●
●
▲
!
!
!
S
!
!
!
!
D
G
TO-220
FQP Series
G
S
D
TO-220F
FQPF Series
G
S
D
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FQP32N20C_F080 功能描述:MOSFET Trans MOS N-Ch 200V 28A 3-Pin 3+Tab RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQP32N20C_Q 功能描述:MOSFET 200V N-Channel Advance Q-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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FQP33N10 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N TO-220
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