- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375886 > FQP10N50CF (FAIRCHILD SEMICONDUCTOR CORP) 500V N-Channel MOSFET PDF資料下載
參數(shù)資料
| 型號： | FQP10N50CF |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 500V N-Channel MOSFET |
| 中文描述： | 10 A, 500 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 996K |
| 代理商： | FQP10N50CF |
4
www.fairchildsemi.com
FQP10N50CF / FQPF10N50CF Rev. A
F
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 9-1. Maximum Safe Operating Area
for FQP10N50CF
Figure 9-2. Maximum Safe Operating Area
for FQPF10N50CF
Figure 10. Maximum Drain Current
vs. Case Temperature
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
= 0 V
2. I
D
= 250 μA
B
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. V
GS
= 10 V
2. I
D
= 5.0 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
DC
100ms
10ms
1ms
100
μ
s
10
μ
s
Operation in This Area
is Limited by R
DS(on)
* Notes :
1. T
C
= 25
2. T
= 150
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-SourceVoltage[V]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
DC
100ms
10ms
1ms
100
μ
s
10
μ
s
Operation in This Area
is Limited by R
DS(on)
* Notes :
1. T
C
= 25
2. T
J
= 150
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-SourceVoltage[V]
25
50
75
100
125
150
0
2
4
6
8
10
12
I
D
,
T
C
, Case Temperature [
o
C]
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FQP10N60CF | 600V N-Channel MOSFET |
| FQP10N60C | 600V N-Channel MOSFET |
| FQPF10N60C | 600V N-Channel MOSFET |
| FQP11N40C | 400V N-Channel MOSFET |
| FQPF11N40C | 400V N-Channel MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FQP10N50CF_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET Improved dv/dt capability |
| FQP10N60 | 制造商:TGS 制造商全稱:Tiger Electronic Co.,Ltd 功能描述:600V N-Channel MOSFET |
| FQP10N60C | 功能描述:MOSFET 600V N-Ch Q-FET advance C-Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQP10N60C_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V N-Channel MOSFET |
| FQP10N60C_Q | 功能描述:MOSFET 600V N-Ch Q-FET advance C-Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。