參數(shù)資料
型號： FQA24N50F
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 500V N-Channel MOSFET
中文描述： 24 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TO-3PN, 3 PIN
文件頁數(shù)： 1/8頁
文件大?。?/td> 617K
代理商： FQA24N50F
2001 Fairchild Semiconductor Corporation
September 2001
F R F E T
Rev. A2, September 2001
F
TM
FQA24N50F
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
where the body diode is used such as phase-shift ZVS,
basic full-bridge topology.
Features
24A, 500V, R
DS(on)
= 0.2
@V
GS
= 10 V
Low gate charge ( typical 90 nC)
Low Crss ( typical 55 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Fast recovery body diode ( max, 250ns )
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQA24N50F
500
24
15.2
96
±
30
1100
24
29
15
290
2.33
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
Typ
--
0.24
--
Max
0.43
--
40
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
! "
!
!
S
!
"
"
D
G
TO-3P
FQA Series
G
S
D
相關(guān)PDF資料
PDF描述
FQA24N50 500V N-Channel MOSFET
FQA24N60 600V N-Channel MOSFET
FQA27N25 250V N-Channel MOSFET(漏源電壓為250V的N溝道增強型MOSFET)
FQA28N50 500V N-Channel MOSFET
FQA28N15 Mounting Bracket RoHS Compliant: NA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQA24N50F_F109 功能描述:MOSFET QFET 500V 24A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQA24N60 功能描述:MOSFET 600V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQA24N60 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N TO-3P
FQA26N30 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 25.5A I(D) | TO-247VAR
FQA27N25 功能描述:MOSFET 250V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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