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參數(shù)資料
| 型號： | FPD7612P70 |
| 英文描述： | HI-FREQUENCY PACKAGED PHEMT |
| 中文描述： | 嗨頻包裝的PHEMT器件 |
| 文件頁數(shù)： | 3/3頁 |
| 文件大小： | 190K |
| 代理商： | FPD7612P70 |
PRELIMINARY
FPD7612P70
H
I
-F
REQUENCY
P
ACKAGED P
HEMT
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://
www.filtrionic.co.uk/semis
Revised:
7/15/05
Email:
sales@filcsi.com
(DIMENSIONS IN mm)
BIASING GUIDELINES
Active bias circuits provide good performance stabilization over variations of operating
temperature, but require a larger number of components compared to self-bias or dual-biased.
Such circuits should include provisions to ensure that Gate bias is applied before Drain bias,
otherwise the pHEMT may be induced to self-oscillate. Contact your Sales Representative for
additional information.
Dual-bias circuits are relatively simple to implement, but will require a regulated negative
voltage supply for depletion-mode devices such as the FPD7612P70.
For standard Class A operation, a 50% of I
DSS
bias point is recommended. A small amount of
RF gain expansion prior to the onset of compression is normal for this operating point. Note that
pHEMTs, since they are “quasi- E/D mode” devices, exhibit Class AB traits when operated at
50% of I
DSS
. To achieve a larger separation between P
1dB
and IP3, an operating point in the 25%
to 33% of I
DSS
range is suggested. Such Class AB operation will not degrade the IP3
performance.
PACKAGE OUTLINE AND RECOMMENDED PC BOARD LAYOUT
All information and specifications subject to change without notice.
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