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參數(shù)資料
| 型號(hào)： | FPD2250 |
| 英文描述： | 1.5W POWER PHEMT |
| 中文描述： | 功耗為1.5W PHEMT器件 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 236K |
| 代理商： | FPD2250 |
FPD2250DFN
L
OW
N
OISE
,
H
IGH
L
INEARITY
P
ACKAGED
PHEMTT
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://
www.filtronic.co.uk/semis.com
Revised: 11
/14/05
Email:
sales@filcsi.com
ABSOLUTE MAXIMUM RATINGS
1
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Gate Current
RF Input Power
2
Channel Operating Temperature
Storage Temperature
Total Power Dissipation
Symbol
V
DS
V
GS
I
DS
I
G
P
IN
T
CH
T
STG
P
TOT
Comp.
Test Conditions
-3V < V
GS
< +0V
0V < V
DS
< +8V
For V
DS
> 2V
Forward or reverse current
Under any acceptable bias state
Under any acceptable bias state
Non-Operating Storage
See De-Rating Note below
Min
-40
Max
8
-3
I
DSS
22
525
175
150
3.0
Units
V
V
mA
mA
mW
oC
oC
W
Gain Compression
Simultaneous Combination of Limits
3
1
T
Ambient
= 22
°
C unless otherwise noted
3
Users should avoid exceeding 80% of 2 or more Limits simultaneously
Under any bias conditions
2 or more Max. Limits
5
80
dB
%
2
Max. RF Input Limit must be further limited if input VSWR > 2.5:1
Notes
:
Operating conditions that exceed the Absolute Maximum Ratings will result in permanent damage to the device.
Total Power Dissipation defined as: P
TOT
≡
(P
DC
+ P
IN
) – P
OUT
, where:
P
DC
: DC Bias Power
P
IN
: RF Input Power
P
OUT
: RF Output Power
Total Power Dissipation to be de-rated as follows above 22
°
C:
P
TOT
= 3.0W – (0.025W/
°
C) x T
PACK
where T
PACK
=
package lead temperature above 22
°
C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 65
°
C package lead temperature: P
TOT
= 3.0W – (0.025 x (65 – 22)) = 1.93W
The use of a filled via-hole directly beneath the exposed heatsink tab on the bottom of the package is strongly
recommended to provide for adequate thermal management. Ideally the bottom of the circuit board is
affixed to a heatsink or thermal radiator.
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A per ESD-STM5.1-1998, Human Body Model.
Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site. Evaluation Boards available upon request.
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| FPD3000 | 2W POWER PHEMT |
| FPD4000AF | 4W PACKAGED POWER PHEMT |
| FPD4000AS | 2.5W PACKAGED POWER PHEMT |
| FPD4000V | CAP TANT 7343 PKG 33UF 10%10V |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FPD2250_1 | 制造商:FILTRONIC 制造商全稱:FILTRONIC 功能描述:1.5W POWER PHEMT |
| FPD2250-000 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:1.5W POWER pHEMT |
| FPD2250-000S3 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:1.5W POWER pHEMT |
| FPD2250-000SQ | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:1.5W POWER pHEMT |
| FPD2250DFN | 制造商:FILTRONIC 制造商全稱:FILTRONIC 功能描述:LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT |
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