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參數(shù)資料
| 型號： | FPD10000AF |
| 英文描述： | 10W PACKAGED POWER PHEMT |
| 中文描述： | 10W的包裝的功率PHEMT器件 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 185K |
| 代理商： | FPD10000AF |
PRELIMINARY
FPD10000AF
10W
P
ACKAGED
P
OWER P
HEMT
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://
www.filtronic.co.uk/semis
Revised:
12/07/04
Email:
sales@filcsi.com
PERFORMANCE (1.8 GHz)
40 dBm Output Power (P
1dB
)
11 dB Power Gain (G
1dB
)
-44 dBc WCDMA ACPR at 30 dBm output power
180 to 300 mA typical quiescent current (I
DQ
)
55% Power-Added Efficiency
Evaluation Boards Available
Additional Design Data Available on Website
Usable Gain to 3.8GHz
DESCRIPTION AND APPLICATIONS
The FPD10000AF is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT), optimized for power applications in L-Band. The high power flange-
mount package has been optimized for low electrical parasitics and optimal heatsinking.
Typical applications include drivers or output stages in PCS/Cellular base station transmitter
amplifiers, as well as other power applications in WLL/WLAN amplifiers.
ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
RF SPECIFICATIONS MEASURED AT
f
= 1.8 GHz USING CW SIGNAL
Power at 1dB Gain Compression
Class B Operation
Power Gain at dB Gain Compression
G
1dB
P
1dB
V
DS
= 12V; I
DQ
= 180 mA
V
DS
= 12V; I
DQ
= 180 mA
V
DS
= 12V; I
DQ
= 300 mA
V
DS
= 12 V; I
DQ
= 180 mA
V
DS
= 12 V; I
DQ
= 300 mA
V
DS
= 12V; I
DQ
= 180 mA
I
RF
(drive-up current) ~ 1.5A
V
DS
= 12V; I
DQ
= 180 mA
Channel power = 30 dBm
40
dBm
10
11
16.5
18.0
dB
Maximum Stable Gain: S
21
/S
12
P
IN
= 0dBm, 50
system
Power-Added Efficiency
at 1dB Gain Compression
Adjacent Channel Power Ratio
WCDMA BTS Forward (64 channels)
10.15 dB Pk/Avg 0.001%
MSG
dB
PAE
55
%
ACPR
-44
dBc
Saturated Drain-Source Current
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Drain Breakdown Voltage
I
DSS
I
GSO
|V
P
|
|V
BDGD
|
Θ
CC
V
DS
= 3.0 V; V
GS
= 0 V
V
GS
= -3 V
V
DS
= 3.0 V; I
DS
= 19 mA
I
GD
= 19 mA
See Note on following page
5.2
3
1.1
35
A
mA
V
V
°
C/W
30
Thermal Resistivity (channel-to-case)
3.5
SEE PACKAGE
OUTLINE FOR
MARKING CODE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FPD10000V | 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS |
| FPD1000AS | 1W PACKAGED POWER PHEMT |
| FPD1000V | CAP,SMD,TANT,22UF,20%,6.3V,A |
| FPD1050 | 0.75W POWER PHEMT |
| FPD1500DFN | LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FPD10000V | 制造商:FILTRONIC 制造商全稱:FILTRONIC 功能描述:10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS |
| FPD1000AS | 制造商:FILTRONIC 制造商全稱:FILTRONIC 功能描述:1W PACKAGED POWER PHEMT |
| FPD1000AS_1 | 制造商:FILTRONIC 制造商全稱:FILTRONIC 功能描述:1W PACKAGED POWER PHEMT |
| FPD1000AS-EB | 制造商:FILTRONIC 制造商全稱:FILTRONIC 功能描述:1W PACKAGED POWER PHEMT |
| FPD1000V | 制造商:FILTRONIC 制造商全稱:FILTRONIC 功能描述:1W POWER PHEMT |
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